• Frontiers of Optoelectronics
  • Vol. 4, Issue 4, 462 (2011)
Haifeng LIANG* and Wen REN
Author Affiliations
  • Key Laboratory for Optical Measurement and Thin Film of Shannxi Province, Xi’an Technological University, Xi’an 710032, China
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    DOI: 10.1007/s12200-011-0135-z Cite this Article
    Haifeng LIANG, Wen REN. Electroforming characteristics of SED emitter in Al-AlN granular films[J]. Frontiers of Optoelectronics, 2011, 4(4): 462 Copy Citation Text show less

    Abstract

    The Al-AlN granular film was proposed as a cathode emitter of surface-conduction electron-emission display (SED) and the effect of Al-AlN granular films’ resistivity on electroforming in experiment and simulation methods was studied. Electroforming could be successfully completed with appropriate Al-AlN granular film resistivity between 1.98 and 15.10 mΩ$cm, and the corresponding turn-on voltage of electroforming increased from 6.2 to 10.5 V with the resistivity increasing. In addition, a temperature profile on Al-AlN emitter was simulated and the temperature decreased from middle to two sides, which were corresponding to surface morphology of Al-AlN emitter after electroforming.
    Haifeng LIANG, Wen REN. Electroforming characteristics of SED emitter in Al-AlN granular films[J]. Frontiers of Optoelectronics, 2011, 4(4): 462
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