• Infrared and Laser Engineering
  • Vol. 36, Issue 4, 457 (2007)
[in Chinese]*, [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Vice-effects on Hall measurements in Hg1-xCdxTe samples and relations with the composition of Cd[J]. Infrared and Laser Engineering, 2007, 36(4): 457 Copy Citation Text show less
    References

    [5] VAN der PAUW L J.A method of measuring specific resistivity and Hall effect of discs of arbitrary shape[J].Philips Research Reports,1958,13(1):1-9.

    [6] DENBY D.A holographic interferometer comparable with an in-line reference field laseer speckle interferometer[J].Optics and Laser Technology,1971,3(11):220-229.

    [7] HATTA E,NAGAO J,MUKASA K.Tunneling through a narrow-gap semiconductor with different conduction-and valence-band effective masses[J].Journal of Applied Physics,1996,79(3):1511-1511.

    [8] BHAN R K,KOUL S K,DHAR V,et al.Identification of trap-assisted tunnelling in a constant-current mode in HgCdTe photodiodes[J].Semiconductor Science and Technology,1996,11(12):1901-1905.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Vice-effects on Hall measurements in Hg1-xCdxTe samples and relations with the composition of Cd[J]. Infrared and Laser Engineering, 2007, 36(4): 457
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