• Acta Photonica Sinica
  • Vol. 51, Issue 2, 0251204 (2022)
Lilong MA, Minchao XIE, Wei OU, Yang MEI*, and Baoping ZHANG
Author Affiliations
  • Laboratory of Micro/Nano-Optoelectronics,School of Electronic Science and Engineering,Xiamen University,Xiamen,Fujian 361005,China
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    DOI: 10.3788/gzxb20225102.0251204 Cite this Article
    Lilong MA, Minchao XIE, Wei OU, Yang MEI, Baoping ZHANG. Fabrication and Lasing Properties of Silicon-based GaN Microcavities(Invited)[J]. Acta Photonica Sinica, 2022, 51(2): 0251204 Copy Citation Text show less
    Spontaneous emission spectrum of the epitaxial wafer
    Fig. 1. Spontaneous emission spectrum of the epitaxial wafer
    Fabrication processes of the GaN based microcavity on Si
    Fig. 2. Fabrication processes of the GaN based microcavity on Si
    SEM image of GaN based microcavity on Si
    Fig. 3. SEM image of GaN based microcavity on Si
    Lasing characteristics of microdisk devices
    Fig. 4. Lasing characteristics of microdisk devices
    Mode and polarization characteristics of microdisk devices
    Fig. 5. Mode and polarization characteristics of microdisk devices
    High resolution emission spectrum of the GaN based microcavity
    Fig. 6. High resolution emission spectrum of the GaN based microcavity
    Ariable temperature maser characteristics of microdisk devices
    Fig. 7. Ariable temperature maser characteristics of microdisk devices
    Lilong MA, Minchao XIE, Wei OU, Yang MEI, Baoping ZHANG. Fabrication and Lasing Properties of Silicon-based GaN Microcavities(Invited)[J]. Acta Photonica Sinica, 2022, 51(2): 0251204
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