Laser Diode End-pumped Nd:YVO4 Lasers at 1342 nm

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 17 >Issue 5 >Page 400 > Article

Chinese Journal of Quantum Electronics
Vol. 17, Issue 5, 400 (2000)

Laser Diode End-pumped Nd:YVO4 Lasers at 1342 nm

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Laser Diode End-pumped Nd:YVO4 Lasers at 1342 nm[J]. Chinese Journal of Quantum Electronics, 2000, 17(5): 400 Copy Citation Text

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Abstract

W e report here a high efficient diode pumped Nd：YV04 laser emitting at 1342 nm． The dependence of output power and efficiency on cavity length transmittance of the output mirrors and doped density of Nd ion in YVO4 crystals was investigated，a maximum output power of 3 W was obtained．

Keywords

laser diode LD pump Nd:YVO4 crystal

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Laser Diode End-pumped Nd:YVO4 Lasers at 1342 nm[J]. Chinese Journal of Quantum Electronics, 2000, 17(5): 400

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