• Laser & Optoelectronics Progress
  • Vol. 53, Issue 2, 22303 (2016)
Chen Jiandong* and Huang Shihua
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/lop53.022303 Cite this Article Set citation alerts
    Chen Jiandong, Huang Shihua. Simulation of Photovoltaic Module Characteristics in Arbitrary Solar Radiation and Temperature[J]. Laser & Optoelectronics Progress, 2016, 53(2): 22303 Copy Citation Text show less

    Abstract

    Based on the general theoretical model of solar cell, algebraic equations are constructed by means of the derivative of the short circuit, maximum power point and open circuit of photovoltaic (PV) module. Using parameters, such as short-circuit current, open-circuit voltage, current and voltage at maximum power, given by PV manufacturer at standard test condition, five model parameters (photo current, diode saturation current, series resistance, parallel resistance, ideality factor) can be simulated by genetic algorithm. Compared with Newton iterative method, genetic algorithm can give more accurate and stable simulation results, and the relative error is about 2%. Also, PV module simulator operated in Matlab environment is constructed, and it can simulate the electric characterization of PV module in arbitrary solar radiation and temperature, which is helpful to PV systems researchers.
    Chen Jiandong, Huang Shihua. Simulation of Photovoltaic Module Characteristics in Arbitrary Solar Radiation and Temperature[J]. Laser & Optoelectronics Progress, 2016, 53(2): 22303
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