In situ instant generation of an ultrabroadband near-infrared emission center in bismuth-doped borosilicate glasses via a femtosecond laser

Liping Wang; Jiangkun Cao; Yao Lu; Xiaoman Li; Shanhui Xu; Qinyuan Zhang; Zhongmin Yang; Mingying Peng

doi:10.1364/PRJ.7.000300

Journals >Photonics Research >Volume 7 >Issue 3 >Page 300 > Article

Photonics Research
Vol. 7, Issue 3, 300 (2019)

In situ instant generation of an ultrabroadband near-infrared emission center in bismuth-doped borosilicate glasses via a femtosecond laser

Liping Wang¹, Jiangkun Cao¹, Yao Lu², Xiaoman Li³..., Shanhui Xu¹, Qinyuan Zhang¹, Zhongmin Yang¹ and Mingying Peng^1,*|Show fewer author(s)

Author Affiliations

¹State Key Laboratory of Luminescent Materials and Devices, Guangdong Engineering Technology Research and Development Center of Special Optical Fiber Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China

²Department of Orthopedics, Zhujiang Hospital, Southern Medical University, Guangzhou 510282, China

³School of Physics and Physical Engineering, Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Qufu Normal University, Qufu 273165, China

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DOI: 10.1364/PRJ.7.000300 Cite this Article Set citation alerts

Liping Wang, Jiangkun Cao, Yao Lu, Xiaoman Li, Shanhui Xu, Qinyuan Zhang, Zhongmin Yang, Mingying Peng, "In situ instant generation of an ultrabroadband near-infrared emission center in bismuth-doped borosilicate glasses via a femtosecond laser," Photonics Res. 7, 300 (2019) Copy Citation Text

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Abstract

Bismuth (Bi)-doped photonic materials, which exhibit broadband near-infrared (NIR) luminescence (1000–1600 nm), are evolving into interesting gain media. However, the traditional methods have shown their limitations in enhancing Bi NIR emission, especially in the microregion. Consequently, the typical NIR emission has seldom been achieved in Bi-doped waveguides, which highly restricts the application of Bi-activated materials. Here, superbroadband Bi NIR emission is induced in situ instantly in the grating region by a femtosecond (fs) laser inside borosilicate glasses. A series of structural and spectroscopic characterizations are summoned to probe the generation mechanism. And we show how this novel NIR emission in the grating region can be enhanced significantly and erased reversibly. Furthermore, we successfully demonstrate Bi-activated optical waveguides. These results present new insights into Bi-doped materials and push the development of broadband waveguide amplification.