[4] Sizov F, Rogalski A. THz detectors [J]. Progress in Quantum Electronics, 2010, 34(5): 278-347.
[5] Dyakonov M, Shur M. Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current [J]. Physical Review Letters, 1993, 71(15):2465-2468.
[6] WANG Lin, CHEN Xiao-Shuang, HU Wei-Da, et al. The plasmonic resonant absorption in GaN double-channel high electron mobility transistors[J]. Applied Physics Letters, 2011, 99(6):1391.
[7] GUO Nan, HU Wei-Da, CHEN Xiao-Shuang, et al. Enhanced plasmonic resonant excitation in a grating gated field-effect transistor with supplemental gates[J]. Optics Express, 2013, 21(2):1606.
[8] Lu J Q, Shur M S, Hesler J L, et al. Terahertz detector utilizing two-dimensional electronic fluid[J]. IEEE Electron Device Letters, 1998, 19(10):373-375.
[10] Duque C A, Akimov V, Demediuk R, et al. About possible THz modulator on the base of delta-doped QWs [J]. Superlattices and Microstructures. 2015, 5(11):5-11.
[11] Ando T. Self-consistent results for a GaAs/AlxGa1-xAs heterojunciton. II. low temperature mobility [J]. Journal of the Physical Society of Japan, 1982, 51(12):3900-3907.
[13] Stern F. Self-consistent results for n-type Si inversion layers [J]. Physical Review B Condensed Matter, 1972, 5(12):4891-4899.
[15] Beaton D A, Alberi K, Fluegel B, et al. Precise determination of the direct-indirect band gap energy cross-over composition in AlxGa1-xAs [J]. Japanese Journal of Applied Physics, 2013, 6(7):249-257.
[16] Daoudi M, Dhifallah I, Ouerghi A, et al. Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures [J]. Superlattices & Microstructures, 2012, 51(4):497-505.
[18] Satou A, Ryzhii V, Khmyrova I, et al. Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions [J]. Journal of Applied Physics, 2004, 95(4):2084-2089.
[19] Dyakonov M, Shur M. Plasma wave electronics. Novel terahertz devices using two dimensional electron fluid, special issue on future directions in device science and technologies [J]. IEEE Transactions on Electron Devices, 1996, 43(10):1640-1645.
[20] Rudin S, Rupper G, Gutin A, et al. Theory and measurement of plasmonic terahertz detector response to large signals [J]. Journal of Applied Physics, 2014, 115(6):1-11.
[21] Seliuta D, Kasalynas I, Tamosiunas V, et al. Silicon lens-coupled bow-tie InGaAs-based broadband terahertz sensor operating at room temperature [J]. Electronics Letters, 2006, 42(14):825-827.