• Microelectronics
  • Vol. 52, Issue 3, 383 (2022)
SHEN Jie1、2, WANG Qian1, CHEN Houpeng1、3, NI Shenglan1、2, and SONG Zhitang1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210326 Cite this Article
    SHEN Jie, WANG Qian, CHEN Houpeng, NI Shenglan, SONG Zhitang. Design of a Transient Enhanced Capacitor-Less LDO[J]. Microelectronics, 2022, 52(3): 383 Copy Citation Text show less

    Abstract

    To solve the problem of poor transient response of capacitive-less low dropout linear regulators (LDO), a capacitive-less LDO circuit with transient load change sensing was designed in a 40 nm CMOS process. Active feedforward frequency compensation was used to achieve circuit stability. The transient detection circuit sensed the load changes, and provided a charge or discharge path for the gate of the power transistor to weaken the output voltage fluctuation. The simulation results showed that the maximum overshoot and undershoot voltage of the LDO were 100 mV and 140 mV respectively, and the stable time was 1 μs when the load current changed from 0 to 100 mA. The transient performance was greatly improved within the full load current range.
    SHEN Jie, WANG Qian, CHEN Houpeng, NI Shenglan, SONG Zhitang. Design of a Transient Enhanced Capacitor-Less LDO[J]. Microelectronics, 2022, 52(3): 383
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