[1] Wu Haibin, Wang Changling, He Sumei. Research of Color Rendering of White LED Based on Red and Green Phosphors［J］. Acta Optica Sinica, 2008, 28(9): 1777～1781

[2] Su Liwei, You Da, Cheng Haiying et al.. Characterization of High-Power GaN-Based Green LED on Si Substrate［J］. Acta Optica Sinica, 2009, 29(4):1066～1069

[3] Yi Xiaoyan, Cuo jinxia, Ma Long et al.. Reserch and fabrication of flip-chip high-power blue LEDs［J］. Journal of Optoelectronics·laser, 2006, 17(6): 693～696

[4] H. H. Yen, W. Y. Yeh, H. C. Kuo. GaN alternating current ligth-emitting device［J］. Physical Status Solidi (a), 2007, 204(6): 2077～2081

[5] Grigory A. Onushkin, Lee Young-Jin, Yang Jung-Ja et al.. Efficient alternating current operated white light-emitting diode chip［J］. IEEE photon. Technol. Lett., 2009, 21(1): 33～35

[6] J. P. Ao, Hisao Sato, Takashi Mizobuchi et al.. Monolithic Blue LED Series Arrays for High-Voltage AC Operation［J］. Physical Status Solidi (a), 2002, 194(2): 376～379

[7] Jaehee Cho, Jaewook Jung, Jung Hye Chat et al.. Alternating-current Light Emitting Diodes with a Diode Bridge Circuitry［J］. Japanese J. Appl. Phys., 2007, 46(48): L1194～L1196

[8] F. S. Hwu, G. J. Sheu, M. T. Lin et al.. Method for determining the junction temperature of alternating current light-emitting diodes［J］. IET Sci. Meas. & Tchnol., 2009, 3(2): 159～164

[9] Y. Q. Zong, P. T. Chou, M. T. Lin et al.. Practical method for measurement of AC-driven LEDs at a given junction temperature by using active heat sinks［J］. SPIE, 2009, 7422(8): 742208-1～742208-7

[11] H. Morkoc. Handbook of Nitride Semiconductors and Devices, Vol.3［M］. Weinheim, Germany: Wiley-VCH, 2009, 36～39

[12] M. Kunzer, C. C. Leancu, M. Maier et al.. Well width dependent luminescence characteristics of UV-violet emitting GaInN Q W LED structures［J］. Physical Status Solidi (c), 2008, 5(6): 2170～2172

[13] M. L. Reed, E. D. Readinger, C. G. Moe et al.. Benefits of negative polarization charge in n-InGnN on p-GaN sigle heterostructure light emitting diode with p-side down［J］. Pyhsical Status Solidi (c), 2009, 6(2): 585～588

[14] K. A. Bulashevich, S. Yu. Karpov. Is Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes［J］. Physical Status Solidi (c), 2008, 5(6): 2066～2069

[15] J. Hader, J. V. Moloney, B. Pasenow et al.. On the importance of radiative and Auger losses in GaN-based quantum wells［J］. Appl. Phys. Lett., 2008, 92(26): 261103-1～261103～3

[16] Li Bingqian, Liu Yuhua, Feng Yuchun. The power dissipation of equivalent series resistance and its influence on lumen efficinecy of GaN based high power light-emitting diodes［J］. Acta Physica Sinica, 2008, 57(1): 477～481

[17] Chen Huanting, Lü Yijun, Chen Zhong et al.. Analysis of thermal spreading boards for high-power ALGaInPred LEDs［J］. Acta Optica Sinica, 2009, 29(3): 805～810

[18] Lü Yijun, Lei Ruirui, Gao Yulin et al.. Analysis of luminous efficiency of power LED［J］. Acta optica Sinica, 2009, 29(2): 313～316

[19] P. Manninen, P. Orrevetelainen. On spectral and termal behaviors of AlGaInP light-emitting diodes under pulse-width modulation［J］. Appl. Phys. Lett., 2007, 91(18): 181121-1～181121-3

[20] M. Leroux, N. Grandijean, M. Laugt et al.. Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells［J］. Phys. Rev. B, 1998, 58(20): R13371～R13374

[21] G. Traetta, A. D. Carlo, A. Reale et al.. Charge storage and screening of the internal field in GaN/AlGaN quantum wells［J］. Journal of Crystal Growth, 2001, 230(3):492～496