Author Affiliations
1 Center of Light Manipulations and Applications, Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250014, China2 Laser Microprocessing Group, Department of Applied Physics, University of Salamanca, Salamanca 37008, Spainshow less
Fig. 1. (a) Optical microscope schematic of the ablation areas on Nd∶CaF2 surface; (b) a set of ablation holes and ablation lines at energy of 2.4 μJ
Fig. 2. SEM images of ablation holes on CaF2 crystal surface with different parameters. (a) A=0.4 μJ, N=10; (b) A=0.6 μJ, N=20; (c) A=4 μJ, N=100; (d) A=4 μJ, N=1000
Fig. 3. Parameters of CaF2 crystal in stationary focusing case. (a) Squared diameter D2 of the ablation holes versus the pulse energy Ep; (b) energy flux density threshold versus laser pulse number; (c) energy flux density versus the diameters of ablation holes
Fig. 4. SEM images of ablation lines on CaF2 crystal surface with different parameters. (a)(d) A=0.8 μJ, v=60 μm/s; (b)(e) A=1.6 μJ, v=5 μm/s; (c)(f) A=2.4 μJ, v=5 μm/s
Fig. 5. Widths of ablation lines as a function of scanning speed. (a) E⊥S; (b) E//S
Fig. 6. Parameters of CaF2 crystal in dynamic scanning case.(a)(b) Energy flux density threshold versus effective laser pulse number; (c)(d) widths of the ablation lines versus energy flux density
Number of groups | Set 1 | Set 2 | Set 3 | Set 4 | Set 5 | Set 6 | Set 7 | Set 8 |
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Measured energy Em /μJ | 3 | 5 | 10 | 15 | 20 | 40 | 60 | 100 | Energy on sample Ep /μJ | 0.11 | 0.2 | 0.4 | 0.6 | 0.8 | 1.6 | 2.4 | 4 |
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Table 1. Processing parameters for stationary focusing case and dynamic scanning case
Pulse number | 5 | 10 | 20 | 50 | 100 | 1000 | 10000 |
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ω /μm | 2.760 | 2.908 | 2.994 | 3.030 | 3.074 | 3.117 | 3.142 | Eth /μJ | 0.411 | 0.406 | 0.405 | 0.401 | 0.397 | 0.386 | 0.378 | Fth /(J·cm-2) | 3.432 | 3.061 | 2.876 | 2.775 | 2.675 | 2.529 | 2.438 |
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Table 2. Calculated results of effective radius, threshold of energy and energy flux density of ablation holes on the crystal surface obtained under different pulse numbers