Hao LU, Shengrui XU, Yong HUANG, Xing CHEN, Shuang XU, Xu LIU, Xinhao WANG, Yuan GAO, Yachao ZHANG, Xiaoling DUAN, Jincheng ZHANG, Yue HAO. Epitaxy Single Crystal GaN on AlN Prepared by Plasma-enhanced Atomic Layer Deposition [J]. Journal of Inorganic Materials, 2024, 39(5): 547
- Journal of Inorganic Materials
- Vol. 39, Issue 5, 547 (2024)
1. Schematic diagram of plasma-enhanced atomic layer deposition (PEALD) process of AlN
2. Cross-sectional TEM image of sample 4
3. Surface topographies of AlN
4. XRD patterns of AlN films
5. SEM images of GaN
6. AFM image of sample b
7. Raman spectra of epitaxial GaN on AlN nucleation layers with different thicknesses
8. PL spectra of GaN with different thicknesses of AlN nucleation layers
9. Rocking curves of sample b on different crystal planes
10. Rocking curves of (002) crystal plane for sample a (a) and sample c (b)
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