• Chinese Journal of Quantum Electronics
  • Vol. 19, Issue 5, 461 (2002)
[in Chinese] and [in Chinese]
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    [in Chinese], [in Chinese]. Effect of Temperature-rising-rate on the Sizes of Nanoscale Silicon Particles Formed in Thermally Annealed a-Si:H Films[J]. Chinese Journal of Quantum Electronics, 2002, 19(5): 461 Copy Citation Text show less
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    [in Chinese], [in Chinese]. Effect of Temperature-rising-rate on the Sizes of Nanoscale Silicon Particles Formed in Thermally Annealed a-Si:H Films[J]. Chinese Journal of Quantum Electronics, 2002, 19(5): 461
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