Simulation Study on In04Ga06N/GaN Heterojunction IMPATT Diode

DAI Yang; LU Zhaoyang; YE Qingsong; DANG Jiangtao; LEI Xiaoyi; ZHANG Yunyao; LIAO Chenguang; ZHAO Shenglei; ZHAO Wu

doi:10.13911/j.cnki.1004-3365.210120

Journals >Microelectronics >Volume 51 >Issue 6 >Page 923 > Article

Microelectronics
Vol. 51, Issue 6, 923 (2021)

Simulation Study on In_04Ga_06N/GaN Heterojunction IMPATT Diode

DAI Yang¹, LU Zhaoyang¹, YE Qingsong¹, DANG Jiangtao¹, LEI Xiaoyi¹, ZHANG Yunyao¹, LIAO Chenguang¹, ZHAO Shenglei², and ZHAO Wu¹

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¹[in Chinese]

²[in Chinese]

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DOI: 10.13911/j.cnki.1004-3365.210120 Cite this Article

DAI Yang, LU Zhaoyang, YE Qingsong, DANG Jiangtao, LEI Xiaoyi, ZHANG Yunyao, LIAO Chenguang, ZHAO Shenglei, ZHAO Wu. Simulation Study on In_04Ga_06N/GaN Heterojunction IMPATT Diode[J]. Microelectronics, 2021, 51(6): 923 Copy Citation Text

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Abstract

An In04Ga06N/GaN homo-heterojunction IMPATT diode was proposed. Due to the immature P-type GaN manufacturing process, this research scheme could be taken as an alternative scheme for GaN based IMPATT diode. For comparison, the DC and AC characteristics of both In04Ga06N/GaN heterojunction IMPATT and PN junction IMPATT diode were studied in detail. The results showed that the performance of In04Ga06N/GaN IMPATT diode was better than that of traditional PN junction IMPATT diode without P-type GaN.

Keywords

efficiency homo-heterojunction IMPATT diode InGaN

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