Investigation of III-V on Silicon Adhesively Bonded Semiconductor Lasers with Metal Confinement for Optical Interconnects

Yang Yuede; Sui Shaoshuai; Tang Mingying; Xiao Jinlong; Du Yun; Huang Yongzhen

doi:10.3788/lop51.110010

[1] D A B Miller. Device requirements for optical interconnects to silicon chips [J]. Proc IEEE, 2009, 97(7): 1166-1185.

[2] M J R Heck, H W Chen, A W Fang, et al.. Hybrid silicon photonics for optical interconnects [J]. IEEE J Sel Top Quantum Electron, 2011, 17(2): 333-346.

[3] J W Goodman, F J Leonberger, S Y Kung, et al.. Optical interconnections for VLSI systems [J]. Proc IEEE, 1984, 72(7): 850-866.

[4] Interconnect Working Group. International Technology Roadmap for Semiconductors [R]. ITRS 2011 Winter Meeting, 2011, http:///www.itrs.net/Links/2011Winter/11_Interconnect.pdf.

[5] B Jalali, S Fathpour. Silicon photonics[J]. J Lightwave Technol, 2006, 24(12): 4600-4615.

[6] D Liang, J E Bowers. Recent progress in lasers on silicon [J]. Nature Photonics, 2010, 4(8): 511-517.

[7] H S Rong, R Jones, A S Liu, et al.. A continual-waveRaman silicon laser [J]. Nature, 2005, 433(7027): 725-728.

[8] R E Camacho- Aguilera, Y Cai, N Patel, J T Bessette, et al.. An electrically pumped germanium laser [J]. Opt Express, 2012, 20(10): 11316-11320.

[9] H Wada, T Kamijoh. Room- temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding [J]. IEEE Photon Technol Lett, 1996, 8(2): 173-175.

[10] M Razeghi, M Defour, R Blondeau, et al.. First CW operation of a Ga0.25In0.75As0.5P0.5- InP laser on a silicon substrate [J]. Appl Phys Lett, 1988, 53(24): 2389-2390.

[11] D Pasquariello, K Hjort. Plasma- assisted InP- to- Si low temperature wafer bonding [J]. IEEE J Sel Top Quantum Electron, 2002, 8(1): 118-131.

[12] D Liang, A W Fang, H Park, et al.. Low- temperature, strong SiO2- SiO2 covalent wafer bonding for III- V compound semiconductors-to-silicon photonic integrated circuits [J]. J Electron Mat, 2008, 37(10): 1552-1559 .

[13] G Roelkens, J Brouckaert, D Taillaert, et al.. Integration of InP/InGaAsP photodetectors onto silicon- on- insulator waveguide circuits [J]. Opt Express, 2005, 13(25): 10102-10108.

[14] A W Fang, H Park, O Cohen, et al.. Electrically pumped hybrid AlGaInAs- silicon evanescent laser [J]. Opt Express, 2006,14(20): 9203-9210.

[15] G Roelkens, D Van Thourhout, R Baets, et al.. Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a silicon-on-insulator waveguide circuit [J]. Opt Express, 2006, 14(18): 8154-8159.

[16] A W Fang, B R Koch, R Jones, et al.. A distributed Bragg reflector silicon evanescent laser [J]. IEEE Photon Technol Lett, 2008, 20(17): 1669-1671.

[17] A W Fang, R Jones, H Park, et al.. Integrated AlGaInAs- silicon evanescent racetrack laser and photodetector [J]. Opt Express, 2007, 15(5): 2315-2322.

[18] D Liang, M Fiorentino, S Srinivasan, et al.. Low threshold electrically-pumped hybrid silicon microring lasers [J]. IEEE J Sel Top Quantum Electron, 2011, 17(6): 1528-1533.

[19] J C Hulme, J K Doylend, J E Bowers. Widely tunable vernier ring laser on hybrid silicon [J]. Opt Express, 2013, 21(17): 19718-19722.

[20] J Van Campenhout, P Rojo-Romeo, P Regreny, et al.. Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit [J]. Opt Express, 2007, 15(11): 6744-6749.

[21] G Roelkens, L Liu, D Liang, et al.. III- V/silicon photonics for on- chip and inter- chip optical interconnects [J]. Laser Photon Rev, 2010, 4(6): 751-779.

[22] L Liu, R Kumar, K Huybrechts, et al.. An ultra- small, low- power, all- optical flip- flop memory on a silicon chip [J]. Nature Photonics, 2010, 4(3): 182-187.

[23] S Keyvaninia, G Roelkens, D Van Thourhout, et al.. Demonstration of a heterogeneously integrated III- V/SOI single wavelength tunable laser [J]. Opt Express, 2013, 21(3): 3784-3792.

[24] Y J Zhang, H W Qu, H L Wang, et al.. Hybrid III-V/silicon single-mode laser with periodic microstructures [J]. Opt Lett, 2013, 38(6): 842-844.

[25] Y J Zhang, H L Wang, H W Qu, et al.. A III- V/silicon hybrid racetrack ring single- mode laser with periodic microstructures [J]. Opt Commun, 2013, 301: 112-115.

[26] T Hong, G Z Ran, T Chen, et al.. A selective-area metal bonding InGaAsP-Si laser [J]. IEEE Photon Technol Lett, 2010, 22(15): 1141-1143.

[27] L Tao, L J Yuan, Y P Li, et al.. 4- l InGaAsP- Si distributed feedback evanescent lasers with varying silicon waveguide width [J]. Opt Express, 2014, 22(5):5448-5454.

CLP Journals