• Infrared and Laser Engineering
  • Vol. 48, Issue 11, 1105003 (2019)
Ban Xuefeng1、2、*, Zhao Yihao3, Wang Cuiluan1, Liu Suping1, and Ma Xiaoyu1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.3788/irla201948.1105003 Cite this Article
    Ban Xuefeng, Zhao Yihao, Wang Cuiluan, Liu Suping, Ma Xiaoyu. Design and preparation of grating for 808 nm semiconductor distributed feedback laser[J]. Infrared and Laser Engineering, 2019, 48(11): 1105003 Copy Citation Text show less
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    [3] Wen Ya, Wu Chunting, Yuan Zerui, et al. Research progress of far-infrared solid-state lasers[J].Chinese Optics, 2018, 11(6):889-900. (in Chinese)

    [4] Leng Yanbing, Dong Lianhe, Sun Yanjun. Study on 1×11 Dammann grating with sub-wavelength structure[J]. Infrared and Laser Engineering, 2014, 43(3): 812-817.(in Chinese)

    [5] Lin Dongliang, Zhang Fang, Huang Huijie. Research of scanning slit with minimal penumbra of blades edge in lithography[J].Optics and Precision Engineering,2018, 26(5): 1046-1053. (in Chinese)

    [6] Zhu Jinkui, Kang Weidong, Zeng Xiangwei, et al. Fabrication of bilayer metallic nano gratings in mid-infrared region based on flexible nanoimprint lithography[J]. Optics and Precision Engineering, 2017, 25(12): 67-71. (in Chinese)

    [7] Fu Shenghui, Zhong Yuan, Song Guofeng, et al. High power distributed feedback laser diodes emitting at 820 nm[J]. J of Semiconductors, 2006, 27(6): 966-969.

    [8] He Y, An H, Cai J, et al. 808 nm broad area DFB laser for solid-state laser pumping application[J]. Electronics Letters, 2009, 45(3): 163-164.

    [9] Qi Xiaodong, Ye Shujuan, Zhang Nan, et al. Surface-emitting distributed-feedback semiconductor lasers and grating-coupled laser diodes[J]. Chinese Optics, 2010, 3(5): 415-431.

    [10] Schultz C M, Crump P, Maabdorf A, et al. In situetched gratings embedded in AlGaAs for efficient high power 970 nm distributed feedback broad-area lasers[J]. Applied Physics Letters, 2012, 100(20): 201115. (in Chinese)

    [11] Fricke J. DFB lasers with apodized surface gratings for wavelength stabilization and high efficiency[J]. Semicond Sci Technol, 2017, 32: 075012.

    [12] Zhang Qi, Zhao Yihao, Dong Zhen, et al. 980 nm high-power fundamental mode distributed-feedback laser[J].Chinese Journal of Lasers, 2016, 43(2): 0202004. (in Chinese)

    [13] Wang Haili, Jing Hongqi, Zhao Yihao, et al. Preparation for first-order grating of 975 nm distributed feedback semiconductor laser[J]. Semiconductor Optoelectronics, 2017, 38(4): 531-535. (in Chinese)

    [14] Mostallino. R, Garcia M, Deshayes Y, et al. Thermal inves-tigation on high power dfb broad area lasers at 975 nm, with 60% efficiency[C]//SPIE, 2016, 9733: 97330S-2.

    [15] Kazarinov R F, Henry C H. Second-order distributed feedback lasers with mode selection provided by first-order radiation lossed[J]. Urnal of Quantum Electronics, 1985, 21(2): 143-149.

    Ban Xuefeng, Zhao Yihao, Wang Cuiluan, Liu Suping, Ma Xiaoyu. Design and preparation of grating for 808 nm semiconductor distributed feedback laser[J]. Infrared and Laser Engineering, 2019, 48(11): 1105003
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