[1] Ryzhii V. Characteristics of quantum well infrared photodetectors. J.Appl.Phys.,1997, 81: 6442 - 8
[2] Thibaudeau, L,Bois P, Duboz J Y. A self-consistent model for quantum well infrared photodetectors.J.Appl.Phys., 1996, 79: 446 - 54
[3] Andrews S R, Miller B A. Experimental and theoreticaly studies of the performance of quantum well infrared photodetectors.J.Appl.Phys., 1991 70: 993 - 1003
[4] Whitney R L, Cuff K F, Adams F W. Chapter 3 long wavelength infrared photodetectors based on intersubband transitions in Ⅲ-V semiconductor quantum wells, Semiconductor Quantum Wells and Superlattices for Long-Wavelength Infrared Detectors. Boston Artech House Boston: Artech House, 1993, 55 - 108
[5] Fu Y Willander M, Lu W, et al. Optical coupling in quantum well infrared photodetector by diffration grating. J.Appl.phys., 1998, 84: 5750 - 5
[6] Madhukar A. Physics of Quantum Electron Devices, Berlin Springer-Verlag: 1990, 50
[7] Gavrilovic P, Deppe D G, Meehan K, et al. Implantation disordering of Alx Ga1-x As supperlattices. Appl.Phys.Lett. 1985, 47: 130 - 2
[8] Elman B, Koteles E S, Melman P. GaAs/A1GaAs quantum well intermixing using shallow ion implantation and rapid thermal annealing. J. Appl. Phys., 1989, 66: 2104 - 7
[9] Chi J Y, Wen X, Koteles E S, et al. Spatially selective modification of GaAs/AlGaAs quantum wells by SiO capping and rapid thermai annealing. Appl.Phys.Lett., 1989, 55: 855 - 7
[10] Steele A G, Buchanan M, Liu H C. et al. Postgrowth tunning of quantum well infrared detectors by rapid thermal annealing. J.Appl.Phys., 1994, 75: 8234 - 6
[11] Tan H H, Williams J S, Jagadish C, et al. Large energy shifts in GaAs-AlGaAs quantum wells by proton irradiation-induced inter mixing. Appl.Phys.Lett., 1996, 68: 2401 - 3
[12] Yuan S, Kim Y, Tan H H, et al. Anodic-oxide-induced interdiffusion in GaAs/AlGAaAs quantum wells. J.Appl.Phys., 1998, 83: 1305 - 11
[13] Li Ning, Fu Y, Karlsteen M, et al. Fine structures of photo-response spectra in quantum well infrared photodetector. Appl.Phys.Lett., 1999, 75: 2238 - 40
[14] Li Na, Li Ning, Lu we, et at. Proton implantation and rapid thermal annealing effects on GaAs/AlGaAs quantum well infrared photodetector. Superlattices and Microstructures, 1999, 26: 317 - 24
[15] Crank J. The Mathematics of Diffusion, Oxford: Clarendon 1956
[16] Redinbo G F, Craighead H G, Hong J M. Proton implantation intermixing of GaAs/AlGaAs quantum wells. J. Appl. Phys. 1993, 74: 3099 - 102
[17] Feng W, Chen F, Cheng W Q, et al. Influence of growth conditions on Al-Ga interdiffusion in low-temperature grown AlGaAs/GaAs multiple quantum wells. Appl.Phys.Lett., 1997, 71: 1676-8
[18] Sofo J O, Balseiro C A. Intrinsic bistability in resonant tunneling structures. Phys. Rev., 1990, B42: 7292 - 5
[19] Fu Y, Williander M. Charge accumulation and band edge in the double barrier tunneling structure. J.Appl.Phys., 1992, 71: 3877 - 82
[20] Fu Y, Li N, Karlsteen M, et al. Thermoexcited and photoexcited carrier transports in a GaAs/AlGaAs quantum well infrared photodetecor. J. Appl. Phys., 2000, 87: 511 - 6
[21] Levine B F, Bethea G C, Hasnain G, et al. High sensitivity low dark current 10 GaAs quantum well infrared photodetector. Appl. phys. Lett., 1990, 56: 851
[22] Williams G M, DeWames R E, Farley C W, et al. Excess tunnel currents in AlGaAs/GaAs mulitiple quantum well infrared detectors. Appl. Phys. Lett., 1992, 60: 1324 - 6
[23] Bahder T B, Morrison C A, Bruno H D. Resnant level lifetime in GaAs/AlGaAs double-barrier structures. Appl.Phys.Lett., 1987, 51: 1089 - 90
[24] Buno J D,Bahder T B,Morrison C A. Limiting response time of double-barrier resonant tunneling structures. Phys. Rev.,1988,B37:7098 - 101
[25] Zou N, Rammer J, Chao K A. Tunneling escape of electrons from a double-barrier structure. Phys. Rev., 1992, B46: 15912 - 21
[26] Ikonic Z, Milanovic V, Tjapkin D. Bound-free intraband absorption in GaAs-AlxGa1-xAs semiconductor quantum wells. Appl.Phys.Lett., 1989, 54: 247 - 9
[27] Liu H C. Dependence of absorption spectrum and responsivity on the upper state position in quantum well intersubband photodectors. J. Appl.Phys., 1994, 73: 3062 - 7
[28] Rusli, Chong T C, Chua S K. Theoretical analysis of bound-to-continuum state infrared absorption in GaAs/All-xGaxAs quantum well structures. Jpn.J.Appl. Phys., 1993, 32: 1998 - 2004
[29] Xu W, Fu Y, Willander M. Oscillator strength of intersubband transition in n-type AlAs/GaAlAs quantum well for the normal incident absorption. J. Infrared Millim Waves, 1997, 16: 86 - 92
[30] Levine B F. Quantumm well infrared photodetectors. J.Appl.Phys., 1993, 74: R1 - 81
[31] Bandara K M S V, Levine B F, Asom M T. Tunneeling emitter undoped quantum-well infrared photodetector. J. Appl. Phys., 1993, 74: 346 - 50
[32] Fu Y, Willander M. Alloy scattering in GaAs/AlGaAs quantum well infrared photodetector. J.Appl.Phys., 2000, 88: 288 - 92
[33] Audo T. Self-consistent results for a GaAs/AlxGa1-xAs heterojunction.Ⅱ. Low temperature mobility. Japan. J. Phys. Soc. 1982, 51: 3900 - 7
[34] Bastard G. Energy level and alloy scattering InP-In(Ga)As heterojunctions. Appl. Phys.Lett., 1983, 43: 591 - 3
[35] Ridley B K. Qquantum Processes in Semiconductors. Oxford: Clarendon 1988, 181