• Acta Photonica Sinica
  • Vol. 32, Issue 8, 977 (2003)
[in Chinese]1、2, [in Chinese]1, [in Chinese]1, and [in Chinese]1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Relation of Yellow Band Luminescence of Undoped GaN Epitaxial Grown on AlN/6H-SiC(0001) Substrate with Thin Film Defects[J]. Acta Photonica Sinica, 2003, 32(8): 977 Copy Citation Text show less
    References

    [2] Glaser E R,Kennedy T A,Doverspike K,et al.Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition.Phys Rev,1995,B51(19):: 13326~13336

    [3] Calleja E,Sanchez F J,Basak D.Yellow luminescence and related deep states in undoped GaN.Phys Rev,1997,B55(7):4689

    [4] Ogino T,Akoi M.Mechanism of yellow luminescence in GaN.Jpn J Appl Phys, 1980,19(12):2395~2405

    [5] Neugebauer J,Van de Walle C.Gallium vacancies and yellow luminescence in GaN.Appl Phys Lett,1996,69(4):503~505

    [6] Lee I H,Choi I H,Lee C R,et al.Evolution of stress relaxation and yellow luminescence in GaN/sapphire by Si incorporation.Appl Phys Lett, 1997,71(10):1359~1361

    [7] Li G,Chua S J,Xu S J,et al.Nature and elimination of yellow-band luminescence and donor-acceptor emission of undoped GaN.Appl Phys Lett,1999,74(19):2821~2823

    [8] Christiansen S,Albrecht M,Dorch W.Structural properties and photoluminescence of GaN layer after thermal treatment under N2 ambient.Mat Sci Eng,1997,B43(1):296~299

    [10] Ponce F A,Bour D P,Gotz W.Spatial distribution of the luminescence in GaN thin films.Appl Phys Lett,1996,68(1):57~59

    [11] Wetzel C,Fischer S,Kruger J,et al.Strongly localized exciton in gallium nitride.Appl Phys Lett,1996,68(18):2556

    [12] Wang C W,Soong B S,Chen J Y,et al.Effect of gamma-ray irradiation on the microstructural and luminescent properties of radio-frequency magnetron-sputtered GaN thin films.J Appl Phys,2000,88(11):6355~6358

    [13] Chien F R,Ning X J,Stemmer S J,et al.Growth defects in GaN films on 6H-SiC substrates.Appl Phys Lett,1996,68(19):2678~2680

    [14] Perry W G,Zheleva T,Bremser M D.Correlation of biaxial strains,bound exciton energies,and defect microstructures in GaN films grown on AlN/6H-SiC(0001) substrates.Journal of Electronic Materials,1997,26(3):224~231

    CLP Journals

    [1] LI Li-sha, LIU Fu, SUN Jiu-yu, HE Jin-long, ZHANG Feng-wangdong, WANG Jun-fei, JIANG Zhen-yi. Theoretical Study of Structure and Infrared Vibration Spectra about AlB+n(n=2~10) clusters[J]. Acta Photonica Sinica, 2011, 40(2): 321

    [2] WANG Shan-shan, WANG Xue-wen, YAN Jun-feng, DENG Zhou-hu, DUAN Xiao-feng, ZHAO Wu, ZHANG Zhi-yong. Characteristic Analysis and Preparation of GaN Film by Sol-gel Method[J]. Acta Photonica Sinica, 2009, 38(1): 171

    [3] LI En-ling, ZHU Hong, LI Li-sha, QI Wei, LI Xiao-ping, WANG Jin-yu. Structures and Photoelectron Energy Spectroscopy about GanN3(n=1~8) Clusters[J]. Acta Photonica Sinica, 2010, 39(3): 470

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Relation of Yellow Band Luminescence of Undoped GaN Epitaxial Grown on AlN/6H-SiC(0001) Substrate with Thin Film Defects[J]. Acta Photonica Sinica, 2003, 32(8): 977
    Download Citation