The Relation of Yellow Band Luminescence of Undoped GaN Epitaxial Grown on AlN/6H-SiC(0001) Substrate with Thin Film Defects

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Photonica Sinica >Volume 32 >Issue 8 >Page 977 > Article

Acta Photonica Sinica
Vol. 32, Issue 8, 977 (2003)

The Relation of Yellow Band Luminescence of Undoped GaN Epitaxial Grown on AlN/6H-SiC(0001) Substrate with Thin Film Defects

[in Chinese]^1、2, [in Chinese]¹, [in Chinese]¹, and [in Chinese]¹

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Relation of Yellow Band Luminescence of Undoped GaN Epitaxial Grown on AlN/6H-SiC(0001) Substrate with Thin Film Defects[J]. Acta Photonica Sinica, 2003, 32(8): 977 Copy Citation Text

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