• Semiconductor Optoelectronics
  • Vol. 41, Issue 2, 151 (2020)
WANG Zujun1、*, NING Hao2, XUE Yuanyuan1, XU Rui2, JIAO Qianli2, LIU Minbo1, YAO Zhibin1, MA Wuying1, SHENG Jiangkun1, and DONG Guantao1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.16818/j.issn1001-5868.2020.02.001 Cite this Article
    WANG Zujun, NING Hao, XUE Yuanyuan, XU Rui, JIAO Qianli, LIU Minbo, YAO Zhibin, MA Wuying, SHENG Jiangkun, DONG Guantao. Research Progresses of Radiation Damage Experiments in Laser Diodes[J]. Semiconductor Optoelectronics, 2020, 41(2): 151 Copy Citation Text show less

    Abstract

    Laser diodes (LDs) applied in the space or nuclear radiation environments will be susceptible to the radiation damage, which induces the degradation of the LD performances. In this paper, the radiation experiment progresses of the LDs manufactured at different periods such as the GaAs LDs at forpart, the quantum well LDs, and the quantum dot LDs are reviewed. The degradations of the LD radiation parameters induced by different particles or rays such as protons, neutrons, electrons, and gamma rays are briefly introduced. The key problems needing to be further resolved in the future are analyzed. This paper will provide the basis of the theories and experimental techniques for the investigations of radiation experiment methods, degradation, damage mechanisms, and adiation hardening of the LDs.
    WANG Zujun, NING Hao, XUE Yuanyuan, XU Rui, JIAO Qianli, LIU Minbo, YAO Zhibin, MA Wuying, SHENG Jiangkun, DONG Guantao. Research Progresses of Radiation Damage Experiments in Laser Diodes[J]. Semiconductor Optoelectronics, 2020, 41(2): 151
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