• Microelectronics
  • Vol. 52, Issue 3, 466 (2022)
CHENG Guodong1、2, LU Jiang1、2, ZHAI Luqing3, BAI Yun1、2, TIAN Xiaoli1、2, ZUO Xinxin1、2, YANG Chengyue1、2, TANG Yidan1、2, CHEN Hong1、2, and LIU Xinyu1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • show less
    DOI: 10.13911/j.cnki.1004-3365.210313 Cite this Article
    CHENG Guodong, LU Jiang, ZHAI Luqing, BAI Yun, TIAN Xiaoli, ZUO Xinxin, YANG Chengyue, TANG Yidan, CHEN Hong, LIU Xinyu. Research of Single Event Response Characteristics of Trench Gate SiC MOSFET Devices[J]. Microelectronics, 2022, 52(3): 466 Copy Citation Text show less
    References

    [3] WITULSKI A F, BALL D R, GALLOWAY K F, et al. Single-event burnout mechanisms in SiC power MOSFETs [J]. IEEE Trans Nucl Sci, 2018, 65(1): 1951-1955.

    [4] LAUENSTEIN J M, CASEY M, TOPPER A, et al. Silicon carbide power device performance under heavy-ion irradiation [C]// IEEE NSREC. Boston, MA, USA. 2015: 1-7.

    [5] LU J, LIU J W, TIAN X L, et al. Impact of varied buffer layer designs on single-event response of 12-kV SiC power MOSFETs [J]. IEEE Trans Elec Dev, 2020, 67(9): 3698-3704.

    [6] ZHOU X T, TANG Y, JIA Y P, et al. Single-event effects in SiC double-trench MOSFETs [J]. IEEE Trans Nucl Sci, 2019, 66(11): 2312-2318.

    [7] KRISHNAMURTHY S, KANNAN R, HUSSIN F A, et al. Enhanced trench shielded power UMOSFET for single event burnout hardening [C]// IEEE RSM. Pahang, Malaysia. 2019: 91-94.

    [8] WANG Y, LIN M, LI X J, et al. Single-event burnout hardness for the 4H-SiC trench-gate MOSFETs based on the multi-island buffer layer [J]. IEEE Trans Elec Dev, 2019, 66(10): 4264-4272.

    [9] Data Sheet.S4101 [EB/OL]. https://rohmfs-rohm-com-cn.oss-cn-shanghai.aliyuncs.com/en/products/databook/datasheet/discrete/sic/mosfet/s4101-e.pdf, 2021.

    [10] BALL D R, GALLOWAY K F, JOHNSON R A, et al. Ion-induced energy pulse mechanism for single event burnout in high-voltage SiC power MOSFETs and junction barrier Schottky diodes [J]. IEEE Trans Nucl Sci, 2020, 67(1): 22-28.

    [11] ABBATE C, BUSATTO G, COVA P, et al. Analysis of heavy ion irradiation induced thermal damage in SiC Schottky diodes [J]. IEEE Trans Nucl Sci, 2015, 62(1): 202-209.

    [12] ABBATE C, BUSATTO G,MATTIAZZO S, et al. Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation [J]. Microelec Reliab, 2018, 88-90: 941-945.

    [13] WITULSKI A F, ARSLANBEKOV R, RAMAN A, et al. Single-event burnout of SiC junction barrier Schottky diode high-voltage power devices [J]. IEEE Trans Nucl Sci, 2018, 65(1): 256-261.

    [14] JAVANAINEN A, GALLOWAY K F, FERLET-CAVROIS V, et al. Charge transport mechanisms in heavy-ion driven leakage current in silicon carbide Schottky power diodes [J]. IEEE Trans Dev Mater Reliab, 2016, 16(2): 208-212.

    [15] ZHOU X T, JIA Y P, HU D Q, et al. A simulation-based comparison between Si and SiC MOSFETs on single-event burnout susceptibility [J]. IEEE Trans Elec Dev, 2019, 66(6): 2551-2556.

    [16] BOIGE F, RICHARDEAU F, LEFEBVRE S, et al. Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short circuit operation [J]. Microelec Reliab, 2018, 88(SI): 598-603.

    [17] MARTINELLA C, ALIA R G, STARK R, et al. Impact of terrestrial neutrons on the reliability of SiC VD-MOSFET technologies [J]. IEEE Trans Nucl Sci, 2021, 68(5): 634-641.

    CHENG Guodong, LU Jiang, ZHAI Luqing, BAI Yun, TIAN Xiaoli, ZUO Xinxin, YANG Chengyue, TANG Yidan, CHEN Hong, LIU Xinyu. Research of Single Event Response Characteristics of Trench Gate SiC MOSFET Devices[J]. Microelectronics, 2022, 52(3): 466
    Download Citation