[1] Volker Eyert. The Metal-insulator transitions of VO2:a band theoretical approach [J]. Ann. Phys., 2002,11:650-702.
[2] Guelfucci M F. Electronic calculations on rutile VO2 by the LMTO-ASA method [J]. Journal of Physics and Chemistry of Solids, 2001,62:1961-1966.
[3] Lopez R, Boatner L A, Haynes T E. Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation [J]. Appl. Phys. Lett., 2001,79:3161-3163.
[5] Griffiths C H, Eastwood H K. Influence of stoichiometry on the metal-semiconductor transition in vanadium dioxide [J]. J. Appl. Phys., 1974,45(5):2201-2206.
[6] Zheng Chenmou, Zhang Jieli, Luo Guobin, et al. Preparation of VO2 powders by thermolysis of precursor at low temperature [J]. J. Mater. Sci., 2000,35(11):3425-3429.
[7] Rao R R, Rao P K. A new oxidimetric reagent:postassium dichromate in a strong phosphoric acid medium-Ⅵ:potentiometric titration of vanadium(Ⅲ) alone and in mixture with vanadium (Ⅳ) [J]. Talanta,1966,13:1335-1340.
[8] Goodenough John B. The two components of the crystallographic transition in VO2 [J]. Journal of Solid Chemistry, 1971,3:490-500.