Ultra-Hard Anti-Friction Anti-Reflective Film for Display System

Yonggang Pan; Baoliang Zhao; Xiuhua Fu; Haijun Jin; Yu Geng; Gong Zhang; Haodi Qi

doi:10.3788/AOS241127

Journals >Acta Optica Sinica >Volume 44 >Issue 21 >Page 2131001 > Article

Acta Optica Sinica
Vol. 44, Issue 21, 2131001 (2024)

Ultra-Hard Anti-Friction Anti-Reflective Film for Display System

Yonggang Pan^1,2, Baoliang Zhao^1,2,*, Xiuhua Fu^1,2, Haijun Jin³..., Yu Geng³, Gong Zhang¹ and Haodi Qi^1,2|Show fewer author(s)

Author Affiliations

¹School of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun 130022, Jilin , China

²Zhongshan Research Institute, Changchun University of Science and Technology, Zhongshan 528437, Guangdong , China

³Guangchi Technology (Shanghai) Co., Ltd., Shanghai 200444, China

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DOI: 10.3788/AOS241127 Cite this Article Set citation alerts

Yonggang Pan, Baoliang Zhao, Xiuhua Fu, Haijun Jin, Yu Geng, Gong Zhang, Haodi Qi. Ultra-Hard Anti-Friction Anti-Reflective Film for Display System[J]. Acta Optica Sinica, 2024, 44(21): 2131001 Copy Citation Text

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Fig. 1. Optical constants of Si₃N₄

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$Optical constants of SiON under different O2 gas-filling conditions. (a) Refractive index; (b) extinction coefficient$

Fig. 2. Optical constants of SiON under different O₂ gas-filling conditions. (a) Refractive index; (b) extinction coefficient

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$Optical constants of SiON under different N2 gas-filling conditions. (a) Refractive index; (b) extinction coefficient$

Fig. 3. Optical constants of SiON under different N₂ gas-filling conditions. (a) Refractive index; (b) extinction coefficient

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$Optical constants of SiTiON under different sputtering powers of Ti target conditions. (a) Refractive index; (b) extinction coefficient$

Fig. 4. Optical constants of SiTiON under different sputtering powers of Ti target conditions. (a) Refractive index; (b) extinction coefficient

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Fig. 5. Microscopic image of the surface of film

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Fig. 6. Optical constants of SiTiON

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Fig. 7. SEM image of cross section of slice

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Fig. 8. EDS element imaging results of cross section of slice

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Fig. 9. Theoretical designed spectral curve

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Fig. 10. Design spectrum and test spectrum

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Fig. 11. Hardness test conditions. (a) Curve of applied load with time; (b) curve of pressed depth with time

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Fig. 12. Measurement results of hydrophobic angle. (a) Before friction; (b) after friction

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Fig. 13. Measurement results of hydrophobic angle before and after evaporating AS liquid. (a) Before evaporating; (b) after evaporating

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Fig. 14. Microscopic image of hundred-grid result

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Flow of O₂ /（mL·min^-1）	Flow of N₂ /（mL·min^-1）	$f_{S i_{3} N_{4}}$ /%	$ε_{S i O N}$	$n_{S i O N}$
0	30	100.0	4.203	2.051
45	30	25.0	2.549	1.596
90	30	14.3	2.364	1.538
135	30	10.0	2.292	1.514
180	30	7.6	2.253	1.501
225	30	6.2	2.231	1.494

Table 1. Equivalent permittivity and refractive index of SiON film under different O₂ flows

Flow of O₂ /（mL·min^-1）	Flow of N₂ /（mL·min^-1）	$f_{T i N}$ /%	$ε_{T i O N}$	$n_{T i O N}$
0	30	100.0	2.624	1.619
45	30	57.1	3.665	1.914
90	30	40.0	4.128	2.031
135	30	30.7	4.213	2.053
180	30	25.0	4.559	2.135
225	30	21.1	4.679	2.163

Table 2. Equivalent permittivity and refractive index of TiON film under different O₂ flows

Flow of O₂ / （mL·min^-1）	Flow of N₂ / （mL·min^-1）	$f_{S i_{3} N_{4}}$ /%	$ε_{S i O N}$	$n_{S i O N}$
180	20	5.2	2.215	1.488
180	30	7.6	2.253	1.501
180	40	10.0	2.292	1.514
180	50	12.2	2.328	1.526

Table 3. Equivalent permittivity and refractive index of SiON film under different N₂ flows

Flow of O₂ / （mL·min^-1）	Flow of N₂ / （mL·min^-1）	$f_{T i N}$ /%	$ε_{T i O N}$	$n_{T i O N}$
180	20	18.2	4.763	2.182
180	30	25.0	4.559	2.135
180	40	30.8	4.389	2.095
180	50	35.7	4.249	2.061

Table 4. Equivalent permittivity and refractive index of TiON film under different N₂ flows

Material

TG2/3-Si

ICP×2

TG power /kW

Flow of Ar /

（mL·min^-1）

ICP power /kW

Flow of Ar /

（mL·min^-1）

Flow of O₂ /

（mL·min^-1）

Flow of N₂ /

（mL·min^-1）

Si₃N₄

100

Table 5. Deposition process of Si₃N₄ film

Material	Measuring point	Vickers hardness /HV
Si₃N₄	1	2031.6
	2	2006.3
	3	2025.7

Table 6. Vickers hardness of Si₃N₄ film

ICP power /kW	Vickers hardness /HV	Stress /MPa
0	1416.2	-785.6
1	1431.8	-806.3
2	1458.6	-863.5
3	1462.3	-821.9
4	1507.4	-802.4
5	-	-1136.8

Table 7. Vickers hardness and stress of SiTiON composite film under different ICP power conditions

Material	TG2-Ti		TG3/4-Si		ICP×2
Material	TG power /kW	Flow of Ar /（mL·min^-1）	TG power /kW	Flow of Ar /（mL·min^-1）	ICP power /kW	Flow of Ar /（mL·min^-1）	Flow of O₂ /（mL·min^-1）	Flow of N₂ /（mL·min^-1）
SiTiON	1	50	10	50	4	100	180	30

Table 8. Deposition process of SiTiON film

Material	Measuring point	Vickers hardness /HV
SiTiON	1	1537.3
	2	1503.7
	3	1524.2

Table 9. Vickers hardness of SiTiON_film

Element	Line type	Osimentration	K ratio	Mass fraction /%	σ /%	Percentage of elements /%
N	K linear	2.59	0.00461	3.81	0.41	8.47
O	K linear	22.90	0.07705	49.49	0.26	57.21
Si	K linear	19.36	0.15341	42.89	0.23	28.71
Ti	K linear	1.30	0.01304	3.81	0.08	5.61

Table 10. Contents of major and minor elements in SiTiON composite film

Clean-up time /s	TG2-Ti		TG3/4-Si		ICP×2
Clean-up time /s	TG power /kW	Flow of Ar /（mL·min^-1）	TG power /kW	Flow of Ar /（mL·min^-1）	ICP power /kW	Flow of Ar /（mL·min^-1）	Flow of O₂ /（mL·min^-1）	Flow of N₂ /（mL·min^-1）
90	-	100	-	100	2	120	-	-

Table 11. Process parameters of cleaning

Measuring point	E /GPa	Vickers hardness /HV
1	199.3	1802.6
2	198.5	1793.8
3	197.2	1786.2

Table 12. Young’s modulus and Vickers hardness of anti-reflection film

Material	IBS					RH /A	Thickness /nm
Material	Beam voltage /V	Beam current /mA	Accelerating voltage /V	Flow of O₂ /（mL·min^-1）	Flow of Ar /（mL·min^-1）	RH /A	Thickness /nm
SiO₂	1000	1000	600	50	8	-	5
AS	-	-	-	-	-	200	10

Table 13. Deposition process of AS liquid

Yonggang Pan, Baoliang Zhao, Xiuhua Fu, Haijun Jin, Yu Geng, Gong Zhang, Haodi Qi. Ultra-Hard Anti-Friction Anti-Reflective Film for Display System[J]. Acta Optica Sinica, 2024, 44(21): 2131001

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