• Microelectronics
  • Vol. 54, Issue 2, 346 (2024)
ZHONG Daishan1, WANG Meiyu1, CHEN Zhitao2, ZHANG Youzhi3..., YE Jixing3 and ZHU Youhua1|Show fewer author(s)
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  • 1[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.230350 Cite this Article
    ZHONG Daishan, WANG Meiyu, CHEN Zhitao, ZHANG Youzhi, YE Jixing, ZHU Youhua. Modeling and Analysis of Data Retention Characteristics of One-Time Programmable Memory[J]. Microelectronics, 2024, 54(2): 346 Copy Citation Text show less
    References

    [5] CHEN F, CHEN B, LIN H, et al. Temperature impacts on endurance and read disturbs in charge-trap 3D NAND flash memories [J]. Micromachines, 2021,12(10): 1152-1162.

    [8] KAHNG D, SZE S M. A floating gate and its application to memory devices [J]. IEEE Transactions on Electron Devices, 1967, 14(9): 629-629.

    [9] LUO J, QIN G L, TAN K Z, et al. Life estimation of analog IC based on accelerated degradation testing [C]//Proceedings of the 10th International Conference on Reliability, Maintainability and Safety (ICRMS).Guangzhou, China. 2014: 817-821.

    [10] REDHEAD P A. Thermal desorption of gases [J].Vacuum, 1962, 12(4): 203-211.

    ZHONG Daishan, WANG Meiyu, CHEN Zhitao, ZHANG Youzhi, YE Jixing, ZHU Youhua. Modeling and Analysis of Data Retention Characteristics of One-Time Programmable Memory[J]. Microelectronics, 2024, 54(2): 346
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