• Microelectronics
  • Vol. 53, Issue 4, 636 (2023)
QU Zhi1, CAO Haixiang2, CUI Bifeng1, CHEN Fen1, FENG Jingyu1, and LI Jinheng1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.220395 Cite this Article
    QU Zhi, CAO Haixiang, CUI Bifeng, CHEN Fen, FENG Jingyu, LI Jinheng. A Fast Response FVF-LDO with Capacitor-Less[J]. Microelectronics, 2023, 53(4): 636 Copy Citation Text show less

    Abstract

    A fully integrated flipped voltage follower (FVF) based capacitor-less low-dropout regulator (LDO) with fast transient response and wide input voltage range is presented. Only two capacitors were used as the detection module to dynamically adjust the transient response without additional auxiliary circuit. The method could make up for deficiencies of the traditional LDO, such as low integration, large area, high power consumption and poor transient response. The proposed circuit was fabricated in TSMC 180 nm process. The simulation results show that the circuit’s dropout voltage is 200 mV, the quiescent current is 36 μA, the input voltage range is 2-4 V, the low frequency PSRR is -59 dB. The generated maximum overshoot is 50 mV, the undershoot is 66 mV, and the transient voltage recovery time is 300 ns when ILOAD changes between 0 mA and 10 mA with an edge time of 150 ns and a load capacitance 30 pF.
    QU Zhi, CAO Haixiang, CUI Bifeng, CHEN Fen, FENG Jingyu, LI Jinheng. A Fast Response FVF-LDO with Capacitor-Less[J]. Microelectronics, 2023, 53(4): 636
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