• Chinese Optics Letters
  • Vol. 10, Issue s2, S21603 (2012)
Feng Qiu, Yingfei Lv, Jianhua Guo, Yan Sun, Huiyong Deng, Shuhong Hu, and Ning Dai
DOI: 10.3788/col201210.s21603 Cite this Article Set citation alerts
Feng Qiu, Yingfei Lv, Jianhua Guo, Yan Sun, Huiyong Deng, Shuhong Hu, Ning Dai. Growth and Raman spectra of GaSb quantum dots in GaAs matrices by liquid phase epitaxy[J]. Chinese Optics Letters, 2012, 10(s2): S21603 Copy Citation Text show less
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Data from CrossRef

[1] Yang Wang, Shuhong Hu, Hao Xie, Hongyu Lin, Hongbo lu, Chao Wang, Yan Sun, Ning Dai. Photoluminescence investigation of type-II GaSb/GaAs quantum dots grown by liquid phase epitaxy. Infrared Physics & Technology, 91, 68(2018).

[2] Supachok Thainoi, Suwit Kiravittaya, Thanavorn Poempool, Zon, Noppadon Nuntawong, Suwat Sopitpan, Songphol Kanjanachuchai, Somchai Ratanathammaphan, Somsak Panyakeow. Molecular beam epitaxy growth of InSb/GaAs quantum nanostructures. Journal of Crystal Growth, 477, 30(2017).

[3] P. Lekwongderm, R. Chumkaew, S. Thainoi, S. Kiravittaya, A. Tandaechanurat, N. Nuntawong, S. Sopitpan, V. Yordsri, C. Thanachayanont, S. Kanjanachuchai, S. Ratanathammaphan, Somsak Panyakeow. Study on Raman spectroscopy of InSb nano-stripes grown on GaSb substrate by molecular beam epitaxy and their Raman peak shift with magnetic field. Journal of Crystal Growth, 512, 198(2019).

[4] Feng Qiu, Weiyang Qiu, Yulian Li, Xingjun Wang, Yun Zhang, Xiaohao Zhou, Yingfei Lv, Yan Sun, Huiyong Deng, Shuhong Hu, Ning Dai, Chong Wang, Yu Yang, Qiandong Zhuang, Manus Hayne, A Krier. An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots. Nanotechnology, 27, 065602(2016).

Feng Qiu, Yingfei Lv, Jianhua Guo, Yan Sun, Huiyong Deng, Shuhong Hu, Ning Dai. Growth and Raman spectra of GaSb quantum dots in GaAs matrices by liquid phase epitaxy[J]. Chinese Optics Letters, 2012, 10(s2): S21603
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