The self-assembled type-II GaSb quantum dots (QDs) are successfully grown on semi-insulting GaAs (100) matrix by liquid phase epitaxy technique. The topography of QDs with high growth temperature is characterized by atomic force microscopy (AFM). The cap layer, which is needed for the device fabrication, is obtained for only some tens of nanometers. The non-resonant Raman spectra are applied to investigate the GaSb-like optical phonons localized in the QDs and to confirm convincingly the existence of GaSb QDs.