[2] Sun Y F, Sun, J D, Zhou Y, et al. Room temperture GaN/AIGaN self-Mixing terahertz detector enhanced by resonant antennas [J]. Applied Physics Letters, 2011, 98: 98-99.
[3] Sotoodeh M,Khalid A H, Rezazadeh A A. Empirical low-field mobility model for Ⅲ-Ⅴ compounds applicable in device simulation codes [J]. Appl. Phys. 2000, 87(6):2890.
[4] Alexei Semenov, Oleg Cojocari, Heinz-Wilhelm,et al. Application of Zero-Bias Quasi-Optical Schottky-Diode detectors for Monitoring Short-Pulse and Weak Terahertz Radiation [J]. IEEE Electron Device Letters, 2010,31(7): 674-676.
[5] Peter Sobis.Advanced Schottky Diode Receiver Front-Ends for Terahertz Applications.[D]. Chalmers University of Technology, Gteborg,Sweden. May 2011.
[6] Hesler J L. Planar Schottky Diodes in Submillimeter-Wavelength Waveguide Receivers.[D]. School of Engineering and Applied Science, University of Virginia, Charlottesville, United States, 1996.
[7] Tang A. Y. Modelling of terahertz planar schottky diodes.[D]. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gteborg, Sweden, 2011.
[8] Jeffrey L Hesler,Thomas W Crowe.NEP and Responsivity of THz Zero-Bias Schottky Diode Detectors[C]. Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on the Terahertz Electronics: 844-845.
[9] Jeffrey L.Hesler, Thomas W. Crowe. Responsivity and Noise Measurements of Zero-Bias Schottky Diode Detector[C]. 18th Intl.Symp.Space Terahertz Techn., Pasadena, March 2007.
[10] Lei Liu,Jeffrey L.Hesler,Haiyong Xu,et al.A Broadband Quasi-Optical Terahertz Detector Utilizing a Zero Bias Schottky Diode [J].IEEE Microwave and Wireless Components Letters, 2010, 20(9):504-506.