Plasmonic lithography with 100 nm overlay accuracy

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

doi:10.3969/j.issn.1003-501x.2017.02.010

Journals >Opto-Electronic Engineering >Volume 44 >Issue 2 >Page 241 > Article

Opto-Electronic Engineering
Vol. 44, Issue 2, 241 (2017)

Plasmonic lithography with 100 nm overlay accuracy

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]

Author Affiliations

State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China

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DOI: 10.3969/j.issn.1003-501x.2017.02.010 Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Plasmonic lithography with 100 nm overlay accuracy[J]. Opto-Electronic Engineering, 2017, 44(2): 241 Copy Citation Text

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References

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Plasmonic lithography with 100 nm overlay accuracy[J]. Opto-Electronic Engineering, 2017, 44(2): 241

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