• Microelectronics
  • Vol. 51, Issue 6, 833 (2021)
XIE Zhiyuan1, LI Jie1, GUO Lei1, ZHAO Hao2, YIN Yihui2, ZHANG Wei3, LI Qi1, SUN Tangyou1, LIU Xingpeng1, CHENG Yonghe1, and LI Haiou1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210088 Cite this Article
    XIE Zhiyuan, LI Jie, GUO Lei, ZHAO Hao, YIN Yihui, ZHANG Wei, LI Qi, SUN Tangyou, LIU Xingpeng, CHENG Yonghe, LI Haiou. Design of a 5G Communication Mobile Phone Power Amplifier Based on Transformer Matching[J]. Microelectronics, 2021, 51(6): 833 Copy Citation Text show less
    References

    [2] ZHAO C, LIU H, WU Y, et al. Analysis and design of CMOS Doherty power amplifier based on voltage combining method [J]. IEEE Access, 2017, 5: 1-1.

    [3] LI S J, LV H L, ZHANG Y M, et al. A 32% bandwidth, 472% PAE power amplifier with a reduced IMD3 using GaAs HBT technology [C] // APMC. Kyoto, Japan. 2018: 941-943.

    [4] KANG S Y, JEON M S, KIM J H, et al. Highly efficient 515- to 585-GHz neutralized HBT power amplifier for LTE applications [J]. IEEE Microwave & Wireless Compon Lett, 2018, 28(3): 254-256.

    [5] JU I, CRESSLER J D. An X-band inverse class-F SiGe HBT cascode power amplifier with harmonic-tuned output transformer [C] // IEEE RFIC. Honolulu, HI, USA. 2017: 390-393.

    [6] MUHAREMOVIC N, BAUCH A, AMELIE H, et al. Transformer-based 24 GHz power amplifier in 65 nm CMOS technology for FMCW applications [C] // IEEE RWS. Orlando, FL, USA. 2019.

    [7] DENG C, YE L Q, GONG M. A highly linear 25-32 GHz power amplifier with 22-dBm output power and 30% PAE in 130-nm SiGe BiCMOS [C] // IEEE ICTA. Chengdu, China. 2019.

    [8] MAHON S, MILNER L, SHAHID I, et al. A high power density 4 to 16 GHz non-uniform distributed power amplifier with a novel trifilar[C] // 15th EuMIC. Utrecht, Netherlands. 2020.

    [9] CHIANG K C, TSAI T C, HUANG I, et al. A 27-GHz transformer based power amplifier with 5138-mW/mm2 output power density and 407% peak PAE in 1-V 28-nm CMOS [C] // IEEE MTT-S IMS. Boston, MA, USA. 2019: 1283-1286.

    [10] QUNAJ V, REYNAERT P. A compact Ka-band transformer-coupled power amplifier for 5G in 015 μm GaAs [C] // IEEE BCICTS. Nashville, TN, USA. 2019.

    XIE Zhiyuan, LI Jie, GUO Lei, ZHAO Hao, YIN Yihui, ZHANG Wei, LI Qi, SUN Tangyou, LIU Xingpeng, CHENG Yonghe, LI Haiou. Design of a 5G Communication Mobile Phone Power Amplifier Based on Transformer Matching[J]. Microelectronics, 2021, 51(6): 833
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