• Journal of Infrared and Millimeter Waves
  • Vol. 23, Issue 6, 423 (2004)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. STUDY OF HgCdTe p+-on-n LONG-WAVELENGTH HETERO-JUNCTION DETECTOR[J]. Journal of Infrared and Millimeter Waves, 2004, 23(6): 423 Copy Citation Text show less
    References

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    [2] Wenus J, Rutkowski J, Rogalski A. Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes[J]. SPIE, 2001, 4288: 335-344.

    [3] Antoni Rogalski. Heterostructure HgCdTe photovoltaic detectors[J]. SPIE, 2001, 4355: 1-14.

    [4] Arias J M. Long and middle wavelength infrared photodiodes fabricated with Hg1-x CdxTe grown by molecular-beam epitaxy[J]. J.Appl.Phys, 1989, 65: 1747.

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    [6] Rosenfeld D, Garber V, Bahir G. Quantum efficiency and spectral response of compositionally graded HgCdTe P-n heterojunction photodiodes[J]. J.Appl.Phys. 1994, 76: 4399-4406.

    [7] Antoni Rogalski. Heterostructure HgCdTe photovoltaic detectors[J]. SPIE, 2001, 4355: 1-14.

    [8] TERTERIAN S, CHU M, MESROPIAN S, et al. A Comparative Study and Performance Characteristics of Ion-Implanted and Heterojunction Short-Wave Infrared HgCdTe Focal-Plane Arrays[J]. Journal of Electronic Materials, 2002, 31(7): 720-725.

    [12] Rogalski A. Photovoltaic Detector in Infrared Photon Detectors[M]. USA: Washington, SPIE Optical Engineering Press, Bellingham, 1996:3.

    [13] Kinch M A. Metal Insulator Semiconductor Detectors in Semiconductors and Semimetals[M]. New York: Academic Press, 1981, 18.

    [14] V Dhar, R Ashokan, Z A D Khan, et al. Analysis of the R0A product in n+-p and n+-n-p Hg1-xCdxTe Photodiodes[J]. Semicond. Sci.Technol, 1996, 11: 1077-1084.

    [15] Rogalski A. Infrared Detectors[M]. UK:Norwich, 2000, 8.

    [16] Jakub Wenus, Jaroslaw Rutkowski, Antoni Rogalski. Surface leakage current in HgCdTe photodiodes[J]. SPIE, 4650: 250-258.

    [17] Nemirovsky Y, Rosenfeld D, Adar R, et al. Tunneling and dark currents in HgCdTe photodiodes[J]. J.Vac.Sci.Technol., 1989, A7(2): 528-535.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. STUDY OF HgCdTe p+-on-n LONG-WAVELENGTH HETERO-JUNCTION DETECTOR[J]. Journal of Infrared and Millimeter Waves, 2004, 23(6): 423
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