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Journal of Semiconductors
Vol. 46, Issue 2, 022404 (2025)

Nanowatt-level optoelectronic GaN-based heterostructure artificial synaptic device for associative learning and neuromorphic computing

Teng Zhan^1,2, Jianwen Sun³, Jin Lin^1,2, Banghong Zhang^1,2..., Guanwan Liao⁴, Zewen Liu³, Junxi Wang^1,2, Jinmin Li^1,2 and Xiaoyan Yi^1,2,*|Show fewer author(s)

Author Affiliations

¹Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³School of Integrated Circuits, Tsinghua University, Beijing 100084, China

⁴Beijing Wanlongjingyi Technology Co., Ltd., Beijing 101318, China

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DOI: 10.1088/1674-4926/24080049 Cite this Article

Teng Zhan, Jianwen Sun, Jin Lin, Banghong Zhang, Guanwan Liao, Zewen Liu, Junxi Wang, Jinmin Li, Xiaoyan Yi. Nanowatt-level optoelectronic GaN-based heterostructure artificial synaptic device for associative learning and neuromorphic computing[J]. Journal of Semiconductors, 2025, 46(2): 022404 Copy Citation Text

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References

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Teng Zhan, Jianwen Sun, Jin Lin, Banghong Zhang, Guanwan Liao, Zewen Liu, Junxi Wang, Jinmin Li, Xiaoyan Yi. Nanowatt-level optoelectronic GaN-based heterostructure artificial synaptic device for associative learning and neuromorphic computing[J]. Journal of Semiconductors, 2025, 46(2): 022404

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