• Chinese Optics Letters
  • Vol. 11, Issue s1, S10502 (2013)
Martin Steglich, Thomas Kasebier, Ingmar Hoger, Kevin Fuchsel, Andreas Tunnermann, and Ernst-Bernhard Kley
DOI: 10.3788/col201311.s10502 Cite this Article Set citation alerts
Martin Steglich, Thomas Kasebier, Ingmar Hoger, Kevin Fuchsel, Andreas Tunnermann, Ernst-Bernhard Kley. Black Silicon nanostructures on silicon thin films prepared by reactive ion etching[J]. Chinese Optics Letters, 2013, 11(s1): S10502 Copy Citation Text show less

Abstract

In this letter, the application of dry etching to prepare Black Silicon nanostructures on crystalline silicon thin films on glass is described. The utilized reactive ion etching with an inductively coupled plasma (ICP-RIE) of SF6 and O2 is discussed and a remarkable increase in light absorption of about 70% is demonstrated.
Martin Steglich, Thomas Kasebier, Ingmar Hoger, Kevin Fuchsel, Andreas Tunnermann, Ernst-Bernhard Kley. Black Silicon nanostructures on silicon thin films prepared by reactive ion etching[J]. Chinese Optics Letters, 2013, 11(s1): S10502
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