• Laser & Optoelectronics Progress
  • Vol. 58, Issue 24, 2403001 (2021)
Tong Zhao1、2, Jing Gao1、2、*, Jiangtao Xu1、2, and Kaiming Nie1、2
Author Affiliations
  • 1School of Microelectronics, Tianjin University, Tianjin 300072, China
  • 2Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin 300072, China
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    DOI: 10.3788/LOP202158.2403001 Cite this Article Set citation alerts
    Tong Zhao, Jing Gao, Jiangtao Xu, Kaiming Nie. Optimized Oversampling and Readout Circuit Design for Quanta Image Sensor[J]. Laser & Optoelectronics Progress, 2021, 58(24): 2403001 Copy Citation Text show less
    Design space of QIS
    Fig. 1. Design space of QIS
    Response curves under different bit-depths
    Fig. 2. Response curves under different bit-depths
    Influence of different sampling depth on dynamic range
    Fig. 3. Influence of different sampling depth on dynamic range
    QIS imaging model
    Fig. 4. QIS imaging model
    PDF curve when k is 0 and 1
    Fig. 5. PDF curve when k is 0 and 1
    EBR varing with read noise
    Fig. 6. EBR varing with read noise
    Photon counting error varing with read noise
    Fig. 7. Photon counting error varing with read noise
    Photon counting error varing with λ
    Fig. 8. Photon counting error varing with λ
    Dynamic range and offset metric under different bit-depths
    Fig. 9. Dynamic range and offset metric under different bit-depths
    ADC structure with gain stages
    Fig. 10. ADC structure with gain stages
    Schematic diagram of 3-bit ADC circuit
    Fig. 11. Schematic diagram of 3-bit ADC circuit
    Working sequence diagram of 3-bit ADC
    Fig. 12. Working sequence diagram of 3-bit ADC
    Offset simulation results of ADC
    Fig. 13. Offset simulation results of ADC
    Power consumption of ADC
    Fig. 14. Power consumption of ADC
    Comparison of power consumption between traditional flash ADC and improved ADC
    Fig. 15. Comparison of power consumption between traditional flash ADC and improved ADC
    ParameterMeaning
    tATotal exposure time
    AArea of an sensor pixel
    tTemporal oversampling: number of sample interval during one exposure
    sSpatial oversampling: number of sub-pixels in an pixel
    NQuantization value of ADC at full range for the output of a jot
    nThe number of ADC bit N=2n-1
    aiArea of sub-pixel i
    ΛExposure of the sensor pixel
    τjDuration of sampling interval j
    DEquivalent full well capacity
    λQuantum density
    HThe average number of photons on the sub-pixel
    Table 1. Parameters involved in QIS imaging model
    Tong Zhao, Jing Gao, Jiangtao Xu, Kaiming Nie. Optimized Oversampling and Readout Circuit Design for Quanta Image Sensor[J]. Laser & Optoelectronics Progress, 2021, 58(24): 2403001
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