Author Affiliations
1School of Microelectronics, Tianjin University, Tianjin 300072, China2Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin 300072, Chinashow less
Fig. 1. Design space of QIS
Fig. 2. Response curves under different bit-depths
Fig. 3. Influence of different sampling depth on dynamic range
Fig. 4. QIS imaging model
Fig. 5. PDF curve when k is 0 and 1
Fig. 6. EBR varing with read noise
Fig. 7. Photon counting error varing with read noise
Fig. 8. Photon counting error varing with λ
Fig. 9. Dynamic range and offset metric under different bit-depths
Fig. 10. ADC structure with gain stages
Fig. 11. Schematic diagram of 3-bit ADC circuit
Fig. 12. Working sequence diagram of 3-bit ADC
Fig. 13. Offset simulation results of ADC
Fig. 14. Power consumption of ADC
Fig. 15. Comparison of power consumption between traditional flash ADC and improved ADC
Parameter | Meaning |
---|
tA | Total exposure time | A | Area of an sensor pixel | t | Temporal oversampling: number of sample interval during one exposure | s | Spatial oversampling: number of sub-pixels in an pixel | N | Quantization value of ADC at full range for the output of a jot | n | The number of ADC bit N=2n-1 | ai | Area of sub-pixel i | Λ | Exposure of the sensor pixel | τj | Duration of sampling interval j | D | Equivalent full well capacity | λ | Quantum density | H | The average number of photons on the sub-pixel |
|
Table 1. Parameters involved in QIS imaging model