• Acta Optica Sinica
  • Vol. 23, Issue 5, 619 (2003)
[in Chinese]1、2、*, [in Chinese]2, [in Chinese]2, and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Raman Scattering Studies of MBE-Grown ZnSe/GaAs[J]. Acta Optica Sinica, 2003, 23(5): 619 Copy Citation Text show less
    References

    [1] Guha S, Munekata H, LeGoues F K et al.. Growth mode and dislocation distribution in the ZnSe/GaAs (100) system. Appl. Phys. Lett., 1992, 60(26):3220~3222

    [2] Wang Xingjun, Huang Daming, Sheng Chuangxing et al.. Thickness dependence of exciton and polariton spectra from ZnSe films grown on GaAs substrates. J. Appl. Phys., 2000, 90(12):6114~6119

    [3] Pages O, Soltani M, Zaoui A et al.. A Raman study of coupled plasmon-Lo phonon modes at ZnSe-GaAs interfaces. J. Crystal Growth, 1998, 184/185:188~192

    [4] Richter H, Wang Z P, Ley L. The one phonon Raman spectrum in microcrystalline silicon. Solid State Commum., 1981, 39(7):625~629

    [5] Tiong K K, Amirtharaj P M, Pollak F H. Effects of As+ ion implantation on the Raman spectra of GaAs: "Spatial correlation"interpretation. Appl. Phys. Lett., 1984, 44(1):122~124

    [6] Pollak F H, Tsu R. Raman characterization of semiconductors revisited. Proc. SPIE, 1983, 425:26~35

    [7] Parayanthal P, Pollak F H. Raman scattering in alloy semiconductors: "spatial correlation" model. Appl. Phys. Lett., 1984, 52(20):1822~1825

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Raman Scattering Studies of MBE-Grown ZnSe/GaAs[J]. Acta Optica Sinica, 2003, 23(5): 619
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