[1] Feinleib J, Deneufville J, Moss S C et al.. Rapid reversible light-inducd crystallization of amorphous semiconductors. Appl. Phys. Lett., 1971, 18(6):254~257
[3] Hirotsune A, Miyauchi Y, Terao M. New phase-change rewritable optical recording film having well suppressed material flow for repeated rewriting. Appl. Phys. Lett., 1995, 66(18):2313~2314
[4] Men Liqiu, Tominaga J, Fuji H et al.. High-density optical data storage using scattering-mode super-resolution near-field structure. Proc. SPIE, 2000, 4085:204~207
[5] Kim M R, Seo H, Jung T H et al.. Microstructure-property relationship in nitrogen doped Ge2Sb2Te5 phase-change optical recording media. Proc. SPIE, 1998, 3401:259~262
[6] Lee C M, Chin T S, Huang Y Y et al.. Optical properties of Ge40Sb10Te50Bx(x=0~2) films. Jpn. J. Appl. Phys., 2000, 39(11):6369~6371
[7] Zhou G, Fu Z, Jacobs B A J. High performance media for phase change optical recording. Jpn. J. Appl. Phys., 1999, 38(3B):1625~1628
[8] Lee H, Biswas D, Klein M V et al.. Study of strain and disorder of InxSa1-xP(GaAs,graded GaP) (0.25≤x≤0.8) using spectroscopic ellipsometry and raman spectroscopy. J. Appl. Phys., 1994, 75(10):5040~5051