• Laser & Optoelectronics Progress
  • Vol. 54, Issue 6, 61410 (2017)
Sun Weiyang*, Zhang Shenghai, Wu Tianan, and Zhang Xiaoxu
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/lop54.061410 Cite this Article Set citation alerts
    Sun Weiyang, Zhang Shenghai, Wu Tianan, Zhang Xiaoxu. Broadening the Bandwidth of Chaotic Carrier Transmitter in Semiconductor Lasers with Chaotic Optical Injection[J]. Laser & Optoelectronics Progress, 2017, 54(6): 61410 Copy Citation Text show less

    Abstract

    A scheme of broadening the bandwidth of chaotic carrier transmitter in semiconductor lasers, namely, semiconductor lasers with chaotic optical injection is analyzed. The influence of the parameters, such as the detuning frequency, injection strength, bias current and slave laser feedback intensity, on the chaotic carrier transmitter bandwidth and master laser feedback intensity on the time delay signature are analyzed respectively by numerical simulation. The parameter set of which can broad the bandwidth to 25.8 GHz is confirmed, and it is five times than the original bandwidth of 5.1 GHz.
    Sun Weiyang, Zhang Shenghai, Wu Tianan, Zhang Xiaoxu. Broadening the Bandwidth of Chaotic Carrier Transmitter in Semiconductor Lasers with Chaotic Optical Injection[J]. Laser & Optoelectronics Progress, 2017, 54(6): 61410
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