• Opto-Electronic Engineering
  • Vol. 39, Issue 11, 138 (2012)
ZHANG Wen-jun*, ZHAI Bao-cai, and XU Jian
Author Affiliations
  • [in Chinese]
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    DOI: 10.3969/j.issn.1003-501x.2012.11.022 Cite this Article
    ZHANG Wen-jun, ZHAI Bao-cai, XU Jian. Design, Fabrication and Characterization for Multi-coloured Light Emitting Diode Based on Colloidal Quantum Dots[J]. Opto-Electronic Engineering, 2012, 39(11): 138 Copy Citation Text show less

    Abstract

    Colloidal Quantum Dots (QDs) acted as luminescent layer in light emitting device can be tuned across from visible to near-infrared spectrum by changing the size of QD, and QD-LED has a narrow bandwidth (Full-width at Half-maximum (FWHM) of the Electroluminescence (EL) peak of ~30 nm). Core–shell quantum dots (wavelength at 523nm and 608nm) with a CdSe core and a ZnS shell were used as emissive layers in the devices. Poly-TPD as Hole-transport Layer (HTL) and ZnO as Electron-transport Layer (ETL) were used in device. By fabrication of red and green emitting device based on quantum dots, we researched the feature of device which provides reference for quantum-dot-based LEDs used in the cockpit and medical apparatus. However, the brightness, efficiency and lifetime of QD-LED need to be improved to meet the requirements of commercialization in the near future.
    ZHANG Wen-jun, ZHAI Bao-cai, XU Jian. Design, Fabrication and Characterization for Multi-coloured Light Emitting Diode Based on Colloidal Quantum Dots[J]. Opto-Electronic Engineering, 2012, 39(11): 138
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