Destructive Physical Analysis method of a new Package on Package(PoP) memory

ZHOU Shuai; WENG Zhangzhao; WANG Bin; LUO Zhongtao

doi:10.11805/tkyda2019253

Journals >Journal of Terahertz Science and Electronic Information Technology >Volume 18 >Issue 5 >Page 939 > Article

Journal of Terahertz Science and Electronic Information Technology
Vol. 18, Issue 5, 939 (2020)

Destructive Physical Analysis method of a new Package on Package(PoP) memory

ZHOU Shuai^1、*, WENG Zhangzhao¹, WANG Bin¹, and LUO Zhongtao²

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: 10.11805/tkyda2019253 Cite this Article

ZHOU Shuai, WENG Zhangzhao, WANG Bin, LUO Zhongtao. Destructive Physical Analysis method of a new Package on Package(PoP) memory[J]. Journal of Terahertz Science and Electronic Information Technology , 2020, 18(5): 939 Copy Citation Text

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References

[1] HUNG J P,LIN J C,TSAI P H,et al. Interconnect structure for Package-on-Package devices:U.S., Patent,10/269,685[P]. 2019-4-23.

[2] HSU C L,LIU C S,LU D Y,et al. Package on package devices and methods of packaging semiconductor dies:U.S., Patent 8,981,559[P]. 2015-3-17.

[5] SU Y F,CHIANG K N,LIANG S Y. Design and reliability assessment of novel 3D-IC packaging[J]. Journal of Mechanics, 2017,33(2):193-203.

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