Researching | Single-event-upset effect simulation of HfO2-based ferroelectric field effect transistor read and write circuits

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Acta Physica Sinica
Vol. 69, Issue 9, 098502-1 (2020)

Single-event-upset effect simulation of HfO₂-based ferroelectric field effect transistor read and write circuits

Hua-Mei Li¹, Peng-Fei Hou^1、2、*, Jin-Bin Wang¹, Hong-Jia Song¹, and Xiang-Li Zhong^1、*

Author Affiliations

¹Department of Material Science and Engineer, Xiangtan University, Xiangtan 411105, China

²Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, Fifth Institute of Electronics of the Ministry of Industry and Information Technology, Guangzhou 510610, China

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DOI: 10.7498/aps.69.20200123 Cite this Article

Hua-Mei Li, Peng-Fei Hou, Jin-Bin Wang, Hong-Jia Song, Xiang-Li Zhong. Single-event-upset effect simulation of HfO₂-based ferroelectric field effect transistor read and write circuits [J]. Acta Physica Sinica, 2020, 69(9): 098502-1 Copy Citation Text

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References

[1] Irom F, Nguyen D N, Underwood M L, Virtanen A[J]. IEEE Trans. Nucl. Sci., 57, 3329(2010).

[2] Weller R A, Mendenhall M H, Reed R A, Schrimpf R D[J]. Trans. Nucl. Sci., 57, 1726(2010).

[3] Fu C J, Guo D Y[J]. Micro-nano Technology, 9, 14(2006).

[4] Mikolajick T, Slesazeck S, Park M H, Schroeder U[J]. MRS Bull., 43, 340(2018).

[5] Li H, Hu M, Li C, Duan S[J]. IEEE Computer Society Annual Symposium on VLSI ISVLSI, 65(2014).

[6] He W[J]. Ph. D. Dissertation(2007).

[7] Sharma D K, Khosla R, Sharma S K[J]. Solid-State Electron., 42, 111(2015).

[8] Wang P, Wang Y, Ye L, Wu M, Xie R, Wang X, Hu W[J]. Small, 14, 1800492(2018).

[9] Wang J, Fang H, Wang X, Chen X, Lu W, Hu W[J]. Small, 13, 1700894(2017).

[10] Wang X, Wang P, Wang J, Hu , W. , Zhou , X , Guo N, Chu J[J]. Adv. Mater., 27, 6575(2015).

[11] Tu L, Cao R, Wang X, Chen Y, Wu S, Wang F, Chu J[J]. Nat. Commun., 11, 1(2020).

[12] Tu L, Wang X, Wang J, Meng X, Chu J[J]. Adv. Electron. Mater., 4, 1800231(2018).

[13] Tang M H[J]. Ph. D. Dissertation(2007).

[14] Amusan O A, Massengill L W, Baze M P[J]. IEEE Trans. Nucl. Sci., 54, 2584(2007).

[15] Coic Y M, Musseau O, Leray J L[J]. IEEE Trans. Nucl. Sci., 41, 495(1994).

[16] Li X, Lai L[J]. IEEE Computer Society Annual Symposium on VLSI ISVLSI, 750(2018).

[17] Ni K, Li X Q, Jeffrey A S, Matthew J, Suman D[J]. IEEE Electron Device Lett., 39, 1656(2018).

[18] Lee D, Yoon A, Jang S Y, Yoon J G, Chung J S, Kim M, Scott J F, Noh T W[J]. Phys. Rev. Lett., 107, 057602(2011).

[19] Takahashi M, Zhang W, Sakai S[J]. IEEE International Memory Workshop IMW, 1(2018).

[20] Gong N B, Ma T P[J]. IEEE Electron Device Lett., 37, 1123(2016).

[21] Sharma A, Roy K[J]. IEEE Electron Device Lett., 39, 359(2018).

[22] Liu Q L[J]. Ph. D. Dissertation(2018).

[23] Ding M[J]. Strong Laser and Particle Beam, 31, 066001(2019).

[24] Bosser A L, Gupta V, Javanainen A[J]. IEEE Trans. Nucl. Sci., 65, 1708(2018).

[25] Yan S A, Tang M H, Zhao W, Guo H X, Zhang W L, Xu X Y, Wang X D, Ding H, Chen J W, Li Z, Zhou Y C[J]. Chin. Phys. B, 23, 046104(2014).

[26] [J]. Synopsys Inc. https://www.synopsys.com/silicon/tcad.html

[27] [J]. Nanoscale Integration and Modeling Group. http://ptm.asu.edu/

[28] Miller S L, Mcwhorter P J[J]. J. Appl. Phys., 72, 5999(1992).

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Hua-Mei Li, Peng-Fei Hou, Jin-Bin Wang, Hong-Jia Song, Xiang-Li Zhong. Single-event-upset effect simulation of HfO₂-based ferroelectric field effect transistor read and write circuits [J]. Acta Physica Sinica, 2020, 69(9): 098502-1

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