[1] G R Harrison, S W Thompson, H Kazukonis, et al.. 750-mm ruling engine producing large gratings and Echelles [J]. J Opt Soc Am, 1972, 62(6): 751-756.
[2] Li Xiaotian, Bayanheshig, Qi Xiangdong, et al.. Influence and revising method of machine-ruling grating line′s curve error, location error on plane grating′ performance [J]. Chinese J Lasers, 2013, 40(3): 0308009.
[6] Tan Xin, Liu Ying, Xu Xiangdong, et al.. 13.9 nm Laminar grating as beam splitter [J]. Optics and Precision Engineering, 2009, 12(1): 33-37.
[7] Han Jian, Bayanheshig, Li Wenhao, et al.. Wavefront aberration analysis of the interference image according to different axis alignment errors in the grating exposure system [J]. Acta Optica Sinica, 2012, 32(7): 0705002.
[8] Han Jian, Bayanheshig, Li Wenhao, et al.. Profile evolution of grating masks according to exposure dose and interference fringe contrast in the fabrication of holographic grating [J]. Acta Optica Sinica, 2012, 32(3): 0305001.
[9] Won-Tien Tsang, Shyh Wang. Preferentially etched diffraction gratings in silicon [J]. J Appl Phys, 1975, 46(5): 2163-2166.
[10] R M A Azzam, N M Bashara. Polarization characteristics of scattered radiation from a diffraction grating by ellipsometry with application to surface roughness [J]. Phys Rev B, 1972, 5(12): 4721-4729.
[11] J C Stover. Optical Scattering Measurement and Analysis [M]. Bellingham, WA: SPIE Optical Engineering Press, 1995.
[12] Jing Chen, Litian Lin, Zhijian Li, et al.. Study of anisotropic etching of (100) Si with ultrasonic agitation [J]. Sensor Actuat A: Phys, 2002, 96(2): 152-156.
[13] Chii-Rong Yang, Po-Ying Chen, Yuang-Cherng Chion, et al.. Effects of mechanical agitation and surfactant additive on silicon anisotropic etching in alkaline KOH solution [J]. Sensor Actuat A: Phys, 2005, 119(1): 263-270.
[14] Theo Baum, David J Schiffrin. AFM study of surface finish improvement by ultrasound in the anisotropic etching of Si (100) in KOH for micromachining application [J]. J Micromech Microeng, 1997, 7(4): 338-342.
[15] K Ohwada, Y Negoro, Y Konaka, et al.. Uniform groove-depths in (110) Si anisotropic etching by ultrasonic waves and application to accelerometer fabrication [J]. Sensor Actuat A: Phys, 1995, 50(1): 93-98.
[16] I Zubel, M Kramkowska. The effect of isopropyl alcohol on etching rate and roughness of (100) Si surface etched in KOH and TMAH solutions [J]. Sensor Actuat A, 2001, 93(2): 138-147.
[17] S A Campbell, K Cooper, L Dixon, et al.. Inhibition of pyramid formation in the etching of Si P 〈100〉 in aqueous potassium hydroxide-isopropanol [J]. J Micromech Microeng, 1995, 5(3): 209-218.
[18] C Strandman, L Rosengren, H G A Elderstig, et al.. Fabrication of 45° mirrors together with well-defined V-grooves using wet anisotropic etching of silicon [J]. J Microelectromech S, 1995, 4(4): 213-219.
[19] Y Backlund, L Rosengren. New shapes in (100) Si using KOH and EDP etches [J]. J Micromech Microeng, 1992, 2(2): 75-79.
[20] I Zubel. Silicon anisotropic etching in alkaline solutions III: on the possibility of spatial structures forming in the course of Si (100) anisotropic etching in KOH and KOH+IPA solutions [J]. Sensor Actuat A, 2000, 84(1): 116-125.
[21] C Moldovan, R losub, D Dascalu, et al.. Anisotropic etching of silicon in complexant redox alkaline system [J]. Sensor Actuat B, 1999, 58(1-3): 438-449.
[22] C Moldovan, R losub, M Modreanu. Elimination of silicon hillocks using an alkaline complexant etching system [J]. Int J Inorg Mater, 2001, 3(8): 1173-1176.
[23] R Divan, H Camon, N Moldovan, et al.. Limiting roughness in anisotropic etching [C]. IEEE Semiconductor Conference, 1997, 2: 553-556.
[24] R Divan, N Moldovan, H Camon. Roughning and smoothing dynamic during KOH silicon etching [J]. Sensor Actuat A, 1999, 74(1-3): 18-23.
[25] I Zubel, I Barycka, K Kotowska, et al.. Silicon anisotropic etching in alkaline solutions IV: the effect of organic and inorganic agents on silicon anisotropic etching process [J]. Sensor Actuat A, 2001, 87(3): 163-171.
[26] I Zubel, M Kramkowska. The effect of alcohol additives on etching characteristics in KOH solutions [J]. Sensor Actuat A, 2002, 101(3): 255-261.
[27] Cui Zheng. Nanofabrication Technologies and Applications (2nd Edition) [M]. Beijing: Higher Education Press, 2009. 314-315.
[28] J M Lai, W H Chieng, Y C Huang. Precision alignment of mask etching with respect to crystal orientation [J]. J Micromech Microeng, 1998, 8(4): 327-329.
[29] R L Bristol, J A Britten, R Hemphill, et al.. Silicon diffraction gratings for use in the far and extreme-ultraviolet [C]. SPIE, 1997, 3114: 580-585.
[30] S M Hu, D R Kerr. Observation of etching of n-type silicon in aqueous HF solutions [J]. J Electrochem Soc, 1967, 114(4): 414.
[31] Minseung Ahn, Ralf K Heilmann, Mark L Schattenburg. Fabrication of ultrahigh aspect ratio freestanding gratings on silicon-on-insulator wafers [J]. J Vac Sci Technol B, 2007, 25(6): 2593-2597.
[32] Minseung Ahn, Ralf K Heilmann, Mark L Schattenburg. Fabrication of 200 nm period blazed transmission gratings on silicon-on-insulator wafers [J]. J Vac Sci Technol B, 2008, 26(6): 2179-2182.
[33] Chen Yong, Qiu Keqiang, Xu Xiangdong, et al.. Design and fabrication of 1000 line/mm soft X-ray freestanding blazed transmission gratings [J]. Acta Physica Sinica, 2012, 61(12): 120702.