New type of SiO2 gate insulator a-Si TFT uncooled infrared detector

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Infrared and Laser Engineering >Volume 35 >Issue 6 >Page 764 > Article

Infrared and Laser Engineering
Vol. 35, Issue 6, 764 (2006)

New type of SiO2 gate insulator a-Si TFT uncooled infrared detector

[in Chinese]^*, [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese]. New type of SiO2 gate insulator a-Si TFT uncooled infrared detector[J]. Infrared and Laser Engineering, 2006, 35(6): 764 Copy Citation Text

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References

[1] SCHIMERT T R,RATECLIFF D D,BRADY J F,et al.Low cost,low power uncooled a-Si-based micro infrared camera for unattended ground sensor application[C]//Proceedings of SPIE,Unattended Ground Sensor Technologies and Applications,1999,3713:101-111.

[2] MOTTIN E,BAIN A,MARTIN J L,et al.Uncooled amorphous silicon technology enhancement for 25 μm pixel pitchachievement[C]//Proceedings of SPIE,Infrared Technology and Applications ⅩⅩⅧ,2002,4820:200-207.

[3] TISSOT J L.Advanced IR detector technology development at CEA/LETI[J].Infrared Physics & Technology,2002,43(3):223-228.

[5] MACKENZIE K D,SNELL A J,FRENCK I,et al.Characterization and properties of optimized amorphous silicon field effect transistors[J].Appl Phys,1983,A31(2):87-92.

[6] STREET R A.Technology and Applications of Amorphous Silicon[M].New York:Springer,2000.

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[in Chinese], [in Chinese], [in Chinese]. New type of SiO2 gate insulator a-Si TFT uncooled infrared detector[J]. Infrared and Laser Engineering, 2006, 35(6): 764

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