[1] Trinh P D,Yegnanarayanan S,Coppinger F,et al.Siliconon-insulator (SOL) phased-array wavelength multi/demultiplexer with extremely low-polarization sensitivity[J].IEEE Photon Technol Lett,1997,9:940-942.

[2] Sorer R A.Silicon-based optoelectronics[J].Proc.IEEE,1993,81:1687-1706.

[3] Rune S Jacobsen,Karin N Andersen,Peter I Borel,et al.Strained silicon as a new electro-optic material[J].Nature,2006,441:199-202.

[4] Moss D J,Ghahramani E,Sipe J E,et al.Band-structure calculation of dispersion and anisotropy in X(3) for third-harmonic generation in Si,Ge,and GaAs[J],phys.Rev.B,1990,41:1542-1560.

[5] Gutkin A A,Faradzhev F E.Influence of the polarization of light on the electroabsorption in silicon[J],Sov,Phys.Semicond,1973,6:1524-1527.

[8] Soref Richard A,Bennett Brian R.Electrooptical Effects in silicon[J].IEEE Journal of Quantum Electronics,1987,QE-23 (1):123-129.

[9] Tharmalingam K.Optical absorption in the presence of a uniform field[J],Phys.Rew,1963,130:2204-2206.