Widely tunable, heterogeneously integrated quantum-dot O-band lasers on silicon

Aditya Malik; Joel Guo; Minh A. Tran; Geza Kurczveil; Di Liang; John E. Bowers

doi:10.1364/PRJ.394726

[1] R. Jones, P. Doussiere, J. B. Driscoll, W. Lin, H. Yu, Y. Akulova, T. Komljenovic, J. E. Bowers. Heterogeneously integrated InP/silicon photonics: fabricating fully functional transceivers. IEEE Nanotechnol. Mag., 13, 17-26(2019).

[2] M. Liehr, A. E. Willner, M. Baier, G. Hoefler, N. M. Fahrenkopf, J. Bowers, R. Gladhill, P. O’Brien, E. Timurdogan, Z. Su, F. Kish. Chapter 4–Foundry capabilities for photonic integrated circuits. Optical Fiber Telecommunications VII, 143-193(2020).

[3] D. Bimberg, U. W. Pohl. Quantum dots: promises and accomplishments. Mater. Today, 14, 388-397(2011).

[4] J. Duan, H. Huang, B. Dong, D. Jung, J. C. Norman, J. E. Bowers, F. Grillot. 1.3 μm reflection insensitive InAs/GaAs quantum dot lasers directly grown on silicon. IEEE Photon. Technol. Lett., 31, 345-348(2019).

[5] S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, H. Liu. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nat. Photonics, 10, 307-311(2016).

[6] A. Y. Liu, J. Peters, X. Huang, D. Jung, J. Norman, M. L. Lee, A. C. Gossard, J. E. Bowers. Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si. Opt. Lett., 42, 338-341(2017).

[7] B. Tian, Z. Wang, M. Pantouvaki, P. Absil, J. Van Campenhout, C. Merckling, D. Van Thourhout. Room temperature O-band DFB laser array directly grown on (001) silicon. Nano Lett., 17, 559-564(2017).

[8] J. C. Norman, D. Jung, Z. Zhang, Y. Wan, S. Liu, C. Shang, R. W. Herrick, W. W. Chow, A. C. Gossard, J. E. Bowers. A review of high-performance quantum dot lasers on silicon. IEEE J. Quantum Electron., 55, 2000511(2019).

[9] D. Jung, Z. Zhang, J. Norman, R. Herrick, M. J. Kennedy, P. Patel, K. Turnlund, C. Jan, Y. Wan, A. C. Gossard, J. E. Bowers. Highly reliable low-threshold InAs quantum dot lasers on on-axis (001) Si with 87% injection efficiency. ACS Photon., 5, 1094-1100(2018).

[10] Y. Han, Z. Yan, W. K. Ng, Y. Xue, K. S. Wong, K. M. Lau. Bufferless 1.5 μm III–V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms. Optica, 7, 148-153(2020).

[11] J. E. Bowers, L. Chang, D. Huang, A. Malik, A. Netherton, M. Tran, W. Xie, C. Xiang. Terabit transmitters using heterogeneous III–V/Si photonic integrated circuits. Optical Fiber Communication Conference (OFC), W3F.1(2020).

[12] D. J. Blumenthal, R. Heideman, D. Geuzebroek, A. Leinse, C. Roeloffzen. Silicon nitride in silicon photonics. Proc. IEEE, 106, 2209-2231(2018).

[13] Y. Fan, A. van Rees, P. J. M. van der Slot, J. Mak, R. M. Oldenbeuving, M. Hoekman, D. Geskus, C. G. H. Roeloffzen, K.-J. Boller. Hybrid integrated InP-Si₃N₄ diode laser with a 40-Hz intrinsic linewidth. Opt. Express, 28, 21713-21728(2020).

[14] C. Xiang, W. Jin, J. Guo, J. D. Peters, M. J. Kennedy, J. Selvidge, P. A. Morton, J. E. Bowers. Narrow-linewidth III–V/Si/Si₃N₄ laser using multilayer heterogeneous integration. Optica, 7, 20-21(2020).

[15] T. Komljenovic, S. Srinivasan, E. Norberg, M. Davenport, G. Fish, J. E. Bowers. Widely tunable narrow-linewidth monolithically integrated external-cavity semiconductor lasers. IEEE J. Sel. Top. Quantum Electron., 21, 214-222(2015).

[16] Y. Wang, S. Chen, Y. Yu, L. Zhou, L. Liu, C. Yang, M. Liao, M. Tang, Z. Liu, J. Wu, W. Li, I. Ross, A. J. Seeds, H. Liu, S. Yu. Monolithic quantum-dot distributed feedback laser array on silicon. Optica, 5, 528-533(2018).

[17] Y. Wan, S. Zhang, J. C. Norman, M. J. Kennedy, W. He, S. Liu, C. Xiang, C. Shang, J.-J. He, A. C. Gossard, J. E. Bowers. Tunable quantum dot lasers grown directly on silicon. Optica, 6, 1394-1400(2019).

[18] Y. Wan, S. Zhang, J. C. Norman, M. Kennedy, W. He, Y. Tong, C. Shang, J.-J. He, H. K. Tsang, A. C. Gossard, J. E. Bowers. Directly modulated single-mode tunable quantum dot lasers at 1.3 μm. Laser Photon. Rev., 14, 1900348(2020).

[19] S. Uvin, S. Kumari, A. D. Groote, S. Verstuyft, G. Lepage, P. Verheyen, J. V. Campenhout, G. Morthier, D. V. Thourhout, G. Roelkens. 1.3 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding. Opt. Express, 26, 18302-18309(2018).

[20] G.-L. Su, M. N. Sakib, J. Heck, H. Rong, M. C. Wu. A heterogeneously-integrated III–V/silicon interferometric widely tunable laser. OSA Advanced Photonics Congress (AP) 2019 (IPR, Networks, NOMA, SPPCom, PVLED), IW3A.1(2019).

[21] H. Duprez, C. Jany, C. Seassal, B. B. Bakir. Highly tunable heterogeneously integrated III–V on silicon sampled-grating distributed Bragg reflector lasers operating in the O-band. Opt. Express, 24, 20895-20903(2016).

[22] Z. Zhang, D. Jung, J. C. Norman, W. W. Chow, J. E. Bowers. Linewidth enhancement factor in InAs/GaAs quantum dot lasers and its implication in isolator-free and narrow linewidth applications. IEEE J. Sel. Top. Quantum Electron., 25, 1900509(2019).

[23] M. A. Tran, D. Huang, J. Guo, T. Komljenovic, P. A. Morton, J. E. Bowers. Ring-resonator based widely-tunable narrow-linewidth Si/InP integrated lasers. IEEE J. Sel. Top. Quantum Electron., 26, 1500514(2020).

[24] R. Wang, A. Malik, I. Šimonytė, A. Vizbaras, K. Vizbaras, G. Roelkens. Compact GaSb/silicon-on-insulator 2.0 μm widely tunable external cavity lasers. Opt. Express, 24, 28977-28986(2016).

[25] B. Tossoun, G. Kurczveil, C. Zhang, A. Descos, Z. Huang, A. Beling, J. C. Campbell, D. Liang, R. G. Beausoleil. Indium arsenide quantum dot waveguide photodiodes heterogeneously integrated on silicon. Optica, 6, 1277-1281(2019).

[26] S. Lourdudoss, M. L. Davenport, R. T. Chen, M. A. Tran, C. Jagadish, T. Komljenovic, J. E. Bowers. Chapter six–Heterogeneous integration of III–V lasers on Si by bonding. Silicon Photonics, 99, 139-188(2018).

[27] G. Kurczveil, D. Liang, M. Fiorentino, R. G. Beausoleil. Robust hybrid quantum dot laser for integrated silicon photonics. Opt. Express, 24, 16167-16174(2016).

[28] B. J. Stevens, D. T. D. Childs, H. Shahid, R. A. Hogg. Direct modulation of excited state quantum dot lasers. Appl. Phys. Lett., 95, 061101(2009).

[29] E. U. Rafailov, A. D. McRobbie, M. A. Cataluna, L. O’Faolain, W. Sibbett, D. A. Livshits. Investigation of transition dynamics in a quantum-dot laser optically pumped by femtosecond pulses. Appl. Phys. Lett., 88, 041101(2006).

[30] M. A. Cataluna, W. Sibbett, D. A. Livshits, J. Weimert, A. R. Kovsh, E. U. Rafailov. Stable mode locking via ground- or excited-state transitions in a two-section quantum-dot laser. Appl. Phys. Lett., 89, 081124(2006).

[31] M. A. Tran, D. Huang, J. E. Bowers. Tutorial on narrow linewidth tunable semiconductor lasers using Si/III–V heterogeneous integration. APL Photon., 4, 111101(2019).

[32] M. Osinski, J. Buus. Linewidth broadening factor in semiconductor lasers-an overview. IEEE J. Quantum Electron., 23, 9-29(1987).

[33] W. W. Chow, Z. Zhang, J. C. Norman, S. Liu, J. E. Bowers. On quantum-dot lasing at gain peak with linewidth enhancement factor α_H = 0. APL Photon., 5, 026101(2020).

[34] B. Dong, H. Huang, J. Duan, G. Kurczveil, D. Liang, R. G. Beausoleil, F. Grillot. Frequency comb dynamics of a 1.3 μm hybrid-silicon quantum dot semiconductor laser with optical injection. Opt. Lett., 44, 5755-5758(2019).

[35] D. Huang, M. A. Tran, J. Guo, J. Peters, T. Komljenovic, A. Malik, P. A. Morton, J. E. Bowers. High-power sub-kHz linewidth lasers fully integrated on silicon. Optica, 6, 745-752(2019).

[36] M. Tran, D. Huang, T. Komljenovic, J. Peters, A. Malik, J. Bowers. Ultra-low-loss silicon waveguides for heterogeneously integrated silicon/III-V photonics. Appl. Sci., 8, 1139(2018).

CLP Journals