• Photonics Research
  • Vol. 8, Issue 10, 1551 (2020)
Aditya Malik1、†,*, Joel Guo1、†, Minh A. Tran1、2、†, Geza Kurczveil3, Di Liang3, and John E. Bowers1
Author Affiliations
  • 1Department of Electrical & Computer Engineering, University of California, Santa Barbara, California 93106, USA
  • 2Nexus Photonics, Goleta, California 93117, USA
  • 3Hewlett Packard Labs, Palo Alto, California 94304, USA
  • show less
    DOI: 10.1364/PRJ.394726 Cite this Article Set citation alerts
    Aditya Malik, Joel Guo, Minh A. Tran, Geza Kurczveil, Di Liang, John E. Bowers. Widely tunable, heterogeneously integrated quantum-dot O-band lasers on silicon[J]. Photonics Research, 2020, 8(10): 1551 Copy Citation Text show less
    Schematic diagram of (a) two-ring Vernier and (b) two-ring Vernier with MZI tunable laser. Electrical contacts are shown in gold.
    Fig. 1. Schematic diagram of (a) two-ring Vernier and (b) two-ring Vernier with MZI tunable laser. Electrical contacts are shown in gold.
    (a) LIV characteristics of the Vernier ring laser when both rings are unbiased. (b) Spectral characteristics showing ring mode hops and cavity mode hops. (c) OSA trace at 290 mA drive current (curve has been truncated in the middle) showing both ground state and excited state lasing can be observed. (d) LIV characteristics of the Vernier ring laser when ring one is unbiased and ring two has 45.8 mW electrical power applied. (e) Spectral characteristics showing only cavity mode hops. (f) OSA trace at 290 mA drive current showing only ground-state lasing.
    Fig. 2. (a) LIV characteristics of the Vernier ring laser when both rings are unbiased. (b) Spectral characteristics showing ring mode hops and cavity mode hops. (c) OSA trace at 290 mA drive current (curve has been truncated in the middle) showing both ground state and excited state lasing can be observed. (d) LIV characteristics of the Vernier ring laser when ring one is unbiased and ring two has 45.8 mW electrical power applied. (e) Spectral characteristics showing only cavity mode hops. (f) OSA trace at 290 mA drive current showing only ground-state lasing.
    (a) LIV characteristics of the Vernier ring MZI laser. (b) Spectral characteristics showing cavity mode hops.
    Fig. 3. (a) LIV characteristics of the Vernier ring MZI laser. (b) Spectral characteristics showing cavity mode hops.
    Lasing wavelength as a function of the applied heater power for (a) the first ring and (b) the second ring.
    Fig. 4. Lasing wavelength as a function of the applied heater power for (a) the first ring and (b) the second ring.
    Tuning map of the Vernier ring laser showing (a) peak wavelength and (b) SMSR.
    Fig. 5. Tuning map of the Vernier ring laser showing (a) peak wavelength and (b) SMSR.
    Vernier ring laser: (a) automatically measured spectra over the entire tuning range and (b) manually optimized spectrum at a single point showing 52 dB SMSR.
    Fig. 6. Vernier ring laser: (a) automatically measured spectra over the entire tuning range and (b) manually optimized spectrum at a single point showing 52 dB SMSR.
    Vernier ring MZI laser: (a) automatically measured spectra over the entire tuning range and (b) manually optimized spectrum at a single point showing 58 dB SMSR.
    Fig. 7. Vernier ring MZI laser: (a) automatically measured spectra over the entire tuning range and (b) manually optimized spectrum at a single point showing 58 dB SMSR.
    (a) Coefficients A, B, F calculated for the Vernier ring laser cavity as functions of detuning from the ring resonance peak with αH=2. (b) Estimated Lorentzian linewidth as a function of linewidth enhancement factor. A waveguide loss of 5 dB/cm and an output power of 10 mW were used in the calculation.
    Fig. 8. (a) Coefficients A, B, F calculated for the Vernier ring laser cavity as functions of detuning from the ring resonance peak with αH=2. (b) Estimated Lorentzian linewidth as a function of linewidth enhancement factor. A waveguide loss of 5 dB/cm and an output power of 10 mW were used in the calculation.
    Measured Lorentzian linewidth as a function of wavelength for (a) Vernier ring laser and (b) Vernier ring MZI laser.
    Fig. 9. Measured Lorentzian linewidth as a function of wavelength for (a) Vernier ring laser and (b) Vernier ring MZI laser.
    Measured frequency noise of the Vernier ring MZI laser in logarithmic scale over complete frequency range.
    Fig. 10. Measured frequency noise of the Vernier ring MZI laser in logarithmic scale over complete frequency range.
    Laser TypeIth(mA)Δλ(nm)SMSR (dB)Linewidth (kHz)
    Epitaxial Growth
    DFB [16]12NA50NA
    Tunable [17]331645NA
    Tunable [18]465.435716
    Heterogeneous Integration
    DFB [19]9.5NA47NA
    Vernier ring [15]30544550
    Interferometric [20]9.53040NA
    SGDBR [21]1003535NA
    This work3052585.3
    Table 1. Comparison of O-Band Single Wavelength Lasers on Silicon
    Aditya Malik, Joel Guo, Minh A. Tran, Geza Kurczveil, Di Liang, John E. Bowers. Widely tunable, heterogeneously integrated quantum-dot O-band lasers on silicon[J]. Photonics Research, 2020, 8(10): 1551
    Download Citation