[2] Zayhowski J J, Dill Ⅲ C. Diode-pumped passively Q-switched picosecond microchip lasers. Opt. Lett., 1994, 19(18):1427～1429

[3] Shimony Y, Burshtein Z, Baranga A B-A et al.. Repetitive Q-switching of a CW Nd∶YAG laser using Cr4+∶YAG saturable absorbers. IEEE J. Quant. Electron., 1996, QE-32(2):305～310

[4] Freitag I, Henking R, Tiinnermann A et al.. Quasi-three-level room-temperature Nd∶YAG ring laser with high single-frequency output-power at 946 nm. Opt. Lett., 1996, 20(24):2499～2501

[5] Clarkson W A, Koch R, Hanna D C et al.. Room-temperature diode-bar-pumped Nd∶YAG laser at 946 nm. Opt. Lett., 1996, 21(10):737～739

[6] Zhou Yongzong. Growth of high quality large Nd∶YAG crystals by temperature gradient technique (TGT). J. Crystal Growth, 1986, 78(1):31～35

[7] Danielmeyer H G, Blatte M. Fluorescence quenching in Nd∶YAG. Appl. Phys., 1973, 1(6):269～274