Time-Resolved Femtosecond Free-Induction-Decay in Semiconductor

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 20 >Issue 1 >Page 114 > Article

Acta Optica Sinica
Vol. 20, Issue 1, 114 (2000)

Time-Resolved Femtosecond Free-Induction-Decay in Semiconductor

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Time-Resolved Femtosecond Free-Induction-Decay in Semiconductor[J]. Acta Optica Sinica, 2000, 20(1): 114 Copy Citation Text

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Abstract

Coherent properties for excitons and for free carriers in intrinsic bulk GaAs are studied with femtosecond free induction decay (FID). The GaAs at 77 K is excited at its excitonic energy with dual fs pulses from a Ti:Sapphire laser and the FID is recorded through photocurrent detection. The dephasing rates are determined by comparing the FID with theoretical results for density matrix in homogeneouse brodening two level system.

Keywords

coherent state free induction decay photoconductivity

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Time-Resolved Femtosecond Free-Induction-Decay in Semiconductor[J]. Acta Optica Sinica, 2000, 20(1): 114

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