• Journal of Semiconductors
  • Vol. 42, Issue 12, 122803 (2021)
Ting Zhi1、2, Tao Tao3、4, Xiaoyan Liu1、2, Junjun Xue1、2, Jin Wang1、2, Zhikuo Tao1、2, Yi Li5、6, Zili Xie3、4, and Bin Liu3、4
Author Affiliations
  • 1College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
  • 2College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
  • 3Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
  • 4Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China
  • 5School of Information Science and Technology, Nantong University, Nantong 226019, China
  • 6Tongke School of Microelectronics, Nantong University, Nantong 226019, China
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    DOI: 10.1088/1674-4926/42/12/122803 Cite this Article
    Ting Zhi, Tao Tao, Xiaoyan Liu, Junjun Xue, Jin Wang, Zhikuo Tao, Yi Li, Zili Xie, Bin Liu. Low-threshold lasing in a plasmonic laser using nanoplate InGaN/GaN[J]. Journal of Semiconductors, 2021, 42(12): 122803 Copy Citation Text show less
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    Ting Zhi, Tao Tao, Xiaoyan Liu, Junjun Xue, Jin Wang, Zhikuo Tao, Yi Li, Zili Xie, Bin Liu. Low-threshold lasing in a plasmonic laser using nanoplate InGaN/GaN[J]. Journal of Semiconductors, 2021, 42(12): 122803
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