• Journal of Infrared and Millimeter Waves
  • Vol. 24, Issue 6, 459 (2005)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Author Affiliations
  • [in Chinese]
  • show less
    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. APPLICATION OF LASER BEAM INDUCED CURRENT FOR TECHNOLOGY DETECTING OF HgCdTe TWO-COLOR DETECTOR[J]. Journal of Infrared and Millimeter Waves, 2005, 24(6): 459 Copy Citation Text show less
    References

    [1] Antoni Rogalski. Dual-band infrared focal plane arrays [J].SPIE, 2000, 4340:1-14 .

    [3] Zanatta J P, Ferret P, Loyer R, et al. Single and two color infrared focal plane arrays made by MBE in HgCdTe [J]. SPIE, 2000, 4130:441-451.

    [4] Terterian S,Chu M,Mesropian M, et al. A comparative study and performance characteristics of ion-implanted and heterojunction short-wave infrared HgCdTe focal-plane arrays [J]. Journal of Electronic Materials,2002,31(7):720-725.

    [5] Ebe H, Tanaka M, Miyamoto Y. Dependency of p-n junction depth on ion species implanted in HgCdTe [J]. Journal of Electronic Materials,1999,28(6):854-857.

    [6] Haakenaasen R, Colin T, Steen H. Electron beam induced current study of ion beam milling type conversion in molecular beam epitaxy vacancy-doped CdxHg1-xTe [J]. Journal of Electronic Materials,2000,29(6):849-852.

    [7] White J, Pal R, Dell J M, et al. P-to-n type-conversion mechanisms for HgCdTe exposed to H2/CH4 plasmas [J]. Journal of Electronic Materials,2001,30(6):762-767.

    [8] Musca C A, Siliquint J F, Smith E P G, et al. Laser beam induced current image of reactive ion etching induced n-type doping in HgCdTe [J]. Journal of Electronic Materials,1998,27(6):661-667.

    [9] Fynn K A, Faraone L. Laser beam induced current(LBIC)spatial imaging as a characterization tool for infrared HgCdTe materials and devices [J]. SPIE, 1995, 2552:134-145.

    [10] Bajaj J, Tennant W E, Zucca R, et al. Spatially resolved characterization of HgCdTe materials and devices by scanning layer microscopy [J]. Semicond. Sci. Technol.,1993,8:872-887.

    [12] Musca C A, Redfern D A, et al. Junction depth measurement in HgCdTe using laser beam induced current(LBIC)[J]. Journal of Electronic Materials,1999,28(6):603-610.

    [13] Antoszewski J, Musca C A, Dell J M. Characterization of HgCdTe n on p-type structures obained by reactive ion etching induced p-to-n conversion [J]. Journal of Electronic Materials,2000,29(6):837-840.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. APPLICATION OF LASER BEAM INDUCED CURRENT FOR TECHNOLOGY DETECTING OF HgCdTe TWO-COLOR DETECTOR[J]. Journal of Infrared and Millimeter Waves, 2005, 24(6): 459
    Download Citation