The operating wavelength of a semiconductor laser(LD) varies with temperature. Temperature control of a LD was a common method of extending the normal operating temperature range of an all-solid-state laser(DPSSL). However, commonly used methods have large volume, high energy consumption and low efficiency in the wide temperature range of -50 ℃ to 70 ℃. The wavelength drift coefficient of the GaAs quantum well laser is 0.25 nm/℃, and the multi-peak characteristic of the absorption spectrum of Nd:YAG crystal was analyzed. A GaAs quantum well laser with a working wavelength of 808 nm at high temperature was used as the pump source. The two absorption peaks of 795.7 nm and 808 nm of Nd:YAG crystal were used to reduce the temperature control power consumption by segment heating. The experimental results show that the output pulse characteristics of the DPSSL at the two absorption peaks are basically the same. At lower temperature, the heating power of the segmented temperature control is reduced by 4.7 W, which is close to half of the maximum heating power without segmentation.