[1] Repins I, Contreras M A, Egaas B，et al. 19.9％efficient ZnO／CdS／CuInGaSe2 Solar Cell with 81.2％ Fill Factor［J］. Prog. Photovolt: Res. Appl.,2008,16：235—239.

[2] Negami T, Hashimoto Y, Nishiwaki S. Cu(In,Ga)Se2 thinfilm solar cells with an efficiency of 18%［J］. Solar Energy Materials & Solar Cells, 2001,67:331—335.

[3] Song HoKeun，Kim SooGil，Kim HyeongJoon,et al. Preparation of CuIn1-xGaxSe2 Thin Films by Sputtering and Selenization Process［J］. Solar Energy Materials and Solar cells,2003,75：145—153.

[4] Negami T, Satoh T，Hashimoto Y，et al. Largearea CIGS Absorbers Prepared by Physical Vapor Deposition［J］. Solar Energy Materials and Solar Cells,2001,67：1—9.

[5] Fernfindez A M, Bhattacharya R N. Electrodeposition of CuIn1-xGaxSe2 Precursor Films：optimization of Film Composition and Morphology［J］. Thin Solid Films,2005,474:10—13.

[6] Liu Wei, Tian JianGuo, He Qing, et al. The influence of alloy phases in the precursors on the selenization reaction mechanisms ［J］. J. Phys. D: Appl. Phys.,2009,42:1—5.

[7] Moussa G W El Haj, Ajaka M, Tahchi M. El, et al. Ellipsometric spectroscopy on polycrystalline CuIn1-xGaxSe2: Identification of optical transitions［J］. Phys. Stat. Sol. (a),2005,202:469—475.

[8] Dejene F B, Alberts V. Structural and optical properties of homogeneous Cu(In,Ga)Se2 thin films prepared by thermal reaction of InSe/Cu/GaSe alloys with elemental Se vapour［J］. J. Phys. D: Appl. Phys.,2005,38:22—25.

[9] Venkatachalam M, Kannan M D, Jayakumar S, et al. Effect of annealing on the structural properties of electron beam deposited CIGS thin films［J］. Thin Solid Films,2008,516:6848—6852.

[10] Rockett A. The Electronic effects of point defects in CuIn1-xGaxSe2 ［J］. Thin Solid Films,2000,361—362:330—337.

[11] Assmann L, Berne`de J C, Drici A, et al. Study of the Mo thin films and Mo/CIGS interface properties［J］. Applied Surface Science,2005,246:159—166.

[12] Shankar K, Tep K C, Mor G K, et al. An electrochemical strategy to incorporate nitrogen in nanostructured TiO2 thin films: modification of bandgap and photoelectrochemical properties［J］. J.Phys.D: Appl.Phys.,2006,39:2361—2366.

[13] Bouabid K, Ihlal A, Manar A, et al. Effect of deposition and annealing parameters on the properties of electrodeposited CuIn1-xGaxSe2 thin films［J］. Thin Solid Films,2005,488:62—67.

[14] Lundberg O, Edoff M, Stolt L. The effect of Gagrading in CIGS thin film solar cells［J］. Thin Solid Films,2005,480—481: 520—525.

[15] Wei SuHai, Zhang S B, Zunger A. Effects of Ga addition to CuInSe2 on its electronic, structural, and defect properties［J］. Appl. Phys. Lett.,1998,72:3199—3201.